| PART |
Description |
Maker |
| FR1ZZ-TP FR1ZZP FR1020GP |
1 A, 2000 V, SILICON, SIGNAL DIODE, DO-214AA HSMB, 2 PIN
1 Amp Glass Passivated Rectifier 1200 to 2000 Volts 1 A, 2000 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components, Corp.
|
| FRS244D FN3256 FRS244R FRS244H |
9A, 250V, 0.415 Ohm, Rad Hard, N-Channel Power MOSFETs 9 A, 250 V, 0.415 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
9A, 250V, 0.415 Ohm, Rad Hard, N-Channel Power MOSFETs 0.415 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
From old datasheet system
9A/ 250V/ 0.415 Ohm/ Rad Hard/ N-Channel Power MOSFETs
|
Intersil, Corp.
Intersil Corporation
|
| VI-415-DP VI-415-2 |
VI-415-DP
|
Varitronix international limited
|
| MH32S72BBFA-8 MH32S72BBFA-7 B99046 |
From old datasheet system
2 /415 /919 /104-BIT ( 33 /554 /432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NTSA4100 |
Schottky Rectif
|
ON Semiconductor
|
| GP02-20 |
0.25 A, 2000 V, SILICON, SIGNAL DIODE, DO-204AL
|
|
| R1500 R1200 R1800 |
500Milliamp high voltage silicon rectifier 1200 to 2000 volts
|
Shanghai Lunsure Electronic Tech
|
| R2000 |
500Milliamp high voltage silicon rectifier 1200 to 2000 volts
|
Shanghai Lunsure Electronic Tech
|
| ER1ZZ ER1Q ER1V ER1Y ER1Z |
1 Amp Super Fast Recovery Silicon Rectifier 1200 to 2000 Volts
|
MCC[Micro Commercial Components]
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| TDC-10-1 TDC-10-2 TDC-6-1 PDC-10-1 PDC-10-1-75 PDC |
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:36; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz 0.005 MHz - 20 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 1.2 dB INSERTION LOSS-MAX
6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz 1 MHz - 2000 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 2.5 dB INSERTION LOSS-MAX
6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz 1 MHz - 500 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 1.2 dB INSERTION LOSS-MAX
6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz 1 MHz - 150 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 0.8 dB INSERTION LOSS-MAX
6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz 10 MHz - 700 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 1.1 dB INSERTION LOSS-MAX
6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz 10 MHz - 1500 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 2.3 dB INSERTION LOSS-MAX
6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz 0.01 MHz - 35 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 0.6 dB INSERTION LOSS-MAX
6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz 5 MHz - 1000 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 1.5 dB INSERTION LOSS-MAX
6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz 5 MHz - 750 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 1.9 dB INSERTION LOSS-MAX
6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz 250 MHz - 1000 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 2 dB INSERTION LOSS-MAX
6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz 1 MHz - 1000 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 2 dB INSERTION LOSS-MAX
6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz 5 MHz - 1000 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 2 dB INSERTION LOSS-MAX
6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz 10 MHz - 400 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 2.5 dB INSERTION LOSS-MAX
6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz 800 MHz - 900 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 0.5 dB INSERTION LOSS-MAX
6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz 0.2 MHz - 250 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 0.6 dB INSERTION LOSS-MAX
|
N.A.
Mini-Circuits
Stackpole Electronics, Inc.
|
| MH32D72KLH-10 MH32D72KLH-75 |
2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
2 /415 /919 /104-BIT (33 /554 /432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
|
