| PART |
Description |
Maker |
| TC58NVG0S3AFT TC58NVG0S3AFT05 |
128M X 8 EEPROM 3V, PDSO48
Flash - NAND
|
TOSHIBA
|
| MX23J12840TC-50 |
128M-BIT NAND INTERFACE XtraROMTM 16M X 8 OTPROM, 35 ns, PDSO48
|
Macronix International Co., Ltd.
|
| HY29F400BT-55 HY29F400BR-90 HY29F400BT-70 HY29F400 |
x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 90 ns, PDSO48
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 4兆位12Kx8/256Kx16伏只闪存
x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 45 ns, PDSO48
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB |
Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes
3.3V Differential Transceiver 8-PDIP -40 to 85
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
COILTRONICS RoHS Compliant: Yes 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| S30MS01GP25TAW000 S30MS01GP25TAW003 S30MS01GP25TAW |
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PDSO48
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 32M X 16 FLASH 1.8V PROM, 25 ns, PDSO48
|
Spansion, Inc.
|
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
| BR93L66RFVM-WTR CAT28C64BGI-12T CAT25C32Y14I CAT25 |
EEPROM SRL 256X16 BIT
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
EEPROM (4kx8) 32K 2.5-6.0
EEPROM (4kx8) 32K 1.8-6.0
EEPROM (1024x8) 8K
EEPROM 256K X 8 200ns
EEPROM I2C BUS; 4.5 to 5.5V 16Kbit; -40 to 85 C
EEPROM (256x8) 2K 1.8-6.0
EEPROM (512x8) 4k 1.8-6.0
EEPROM 128K X 8 150ns
EEPROM (8kx8) 64K 1.8-6.0
EEPROM (2048x8)(1024x16)16K
EEPROM U 804-29EE0107CWH
EEPROM 64K X 8 70ns
EEPROM (256x8) 2K 2.5-6.0
EEPROM (8kx8) 64K 2.5-6.0
SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, SOIC
SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, TSSOP
EEPROM (384x8) 128k 16
EEPROM SPI 1KBIT
EEPROM SPI 4096X8 BIT
EEPROM SRL 64X16 BIT
EEPROM (256x8) (128x16) 2K
8-Kb I<sup>2</sup>C CMOS Serial EEPROM, SOIC
EEPROM (128x8) 1k 2.5-6.0
EEPROM (8kx8) 64K 5V 90ns
EEPROM (32kx8) 256K 5V 150
EEPROM (32kx8) 256K 5V 120
EEPROM 2kb 1.7-5.5V Ind I2C
EEPROM 512K-Bit CMOS PARA EEPROM
EEPROM (32kx8) 256K 3V 250
EEPROM 64K X 8 512K 5V 150
EEPROM 256K (32KX8)
|
Omron Electronics, LLC
Atmel, Corp.
MITSUMI ELECTRIC CO., LTD.
Intersil, Corp.
Cypress Semiconductor, Corp.
TE Connectivity, Ltd.
Silicon Storage Technology, Inc.
BCD Semiconductor Manufacturing, Ltd.
Belden, Inc.
Rohm Co., Ltd.
Bourns, Inc.
NXP Semiconductors N.V.
Lattice Semiconductor, Corp.
Rectron Semiconductor
SIEMENS AG
Maxim Integrated Products, Inc.
Rochester Electronics, LLC
RF Solutions, Ltd.
Fujitsu, Ltd.
|
| EBD11ED8ADFB-7B EBD11ED8ADFB EBD11ED8ADFB-6B EBD11 |
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 1GB的无缓冲DDR SDRAM的内存（128M的话x72位，2个等级）
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| CAT28LV64T13I-35T CAT28LV64NA-30T CAT28LV64T13I-30 |
128Kx8 EEPROM
EEPROM EEPROM
8K X 8 EEPROM 3V, 350 ns, PQCC32
|
Vishay Intertechnology, Inc.
STMicroelectronics N.V.
|
|
