PART |
Description |
Maker |
MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
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IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. Vishay Intertechnology, Inc.
|
SPP47N10L |
100-V MOS transistors in S-FET technology( 采用S-FET 技术制作的 100-V MOS 型晶体管) 47 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING N-channel enhancement type MOS FET
|
NEC
|
IPB05CN10NG |
100 A, 100 V, 0.0051 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
INFINEON TECHNOLOGIES AG
|
SUD40N10-25 |
N-Channel 100-V (D-S) 175C MOSFET N-Channel 100-V (D-S) 175`C MOSFET
|
VISAY[Vishay Siliconix]
|
IRF5EA1310 IRF5EA1310PBF |
23 A, 100 V, 0.036 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 100V Single N-Channel Hi-Rel MOSFET in a 28-pin LCC package
|
International Rectifier
|
SFF75N10Z SFF75N10M SFF75N10MD SOLIDSTATEDEVICESIN |
75 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA 75 AMP 100 VOLTS 0.025 OHM N-Channel POWER MOSFET
|
SOLID STATE DEVICES INC SSDI[Solid States Devices, Inc]
|
BSS123LT3G BSS123LT1 BSS123LT1D BSS123LT1G BSS123L |
Power MOSFET 170 mAmps, 100 Volts N-Channel SO-23(170 mA, 100 V,N通道SOT3封装的功率MOSFET) TMOS FET Transistor
|
ONSEMI[ON Semiconductor]
|
IXFN100N10S1 IXFN100N10S3 IXFN100N10S2 |
HiPerFET Power MOSFETs with Schottky Diodes 100 A, 100 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system
|
IXYS, Corp. IXYS[IXYS Corporation]
|
ADL5802 ADL5802-EVALZ ADL5802ACPZ-R7 ADL580209 |
Dual Channel, High IP3, 100 MHz to 6 GHz Active Mixer Dual Channel High IP3 100 MHz – 6 GHz Active Mixer; No of Pins: 24 100 MHz - 6000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER
|
Analog Devices, Inc.
|
FDP085N10A-F102 FDP085N10AF102 FDP085N10A |
N-Channel PowerTrenchMOSFET 100V, 96A, 8.5m N-Channel PowerTrench? MOSFET 100 V, 96 A, 8.5 mΩ
|
Fairchild Semiconductor
|
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