| PART |
Description |
Maker |
| JANTX2N6796 JANTX2N6800 JANTX2N6802 JANTXV2N6796 J |
100 V, 200 V, 400 V & 500 V, N-CHANNEL, ENHANCEMENT MODE MOSFET POWER TRANSISTOR
|
List of Unclassifed Man...
ETC[ETC]
List of Unclassifed Manufacturers
|
| NGB8202N NGB8202NT4 |
Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK
20 A, 400 V, N-Channel D2PAK
20 A, 400 V, N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| MJ13333_D ON1977 MJ13333 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400-500 VOLTS 175 WATTS
From old datasheet system
20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS
|
ON Semiconductor
Motorola, Inc
|
| PPF360M |
N Channel MOSFET; Package: TO-254; ID (A): 14; RDS(on) (Ohms): 0.2; PD (W): 200; BVDSS (V): 400; Rq: 0.63; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| PPF450M |
N Channel MOSFET; Package: TO-254; ID (A): 8; RDS(on) (Ohms): 0.42; PD (W): 150; BVDSS (V): 500; Rq: 0.83; 12 A, 500 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| PPF430E |
N Channel MOSFET; Package: SMD-.5; ID (A): 2.6; RDS(on) (Ohms): 1.5; PD (W): 125; BVDSS (V): 500; Rq: 1; 4.3 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| AQV217AZ AQV210 AQV210A AQV210AX AQV210AZ AQV212 A |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 600V, load current 50 mA. Tape and reel packing style, picked from the 4/5/6-pin side.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 400V, load current 120 mA. Tape and reel packing style, picked from the 1/2/3-pin side.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 100V, load current 320 mA. Tape and reel packing style, picked from the 1/2/3-pin side.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 60V, load current 400 mA. Tape and reel packing style, picked from the 4/5/6-pin side.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 60V, load current 400 mA. Tape and reel packing style, picked from the 1/2/3-pin side.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 60V, load current 400 mA. Tube packing style.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 4/5/6-pin side.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side.
GU (General Use) Type [1-Channel (Form A) Type]
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 400V, load current 120 mA. Tube packing style.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 400V, load current 120 mA. Tape and reel packing style, picked from the 4/5/6-pin side.
|
Matsushita Electric Works(Nais)
NAIS[Nais(Matsushita Electric Works)]
|
| BUZ45B BUZ64 |
10 A, 500 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
11.5 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
SIEMENS A G
|
| IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From old datasheet system
3.1A 400V 1.800 Ohm N-Channel Power MOSFETs
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation]
HARRIS SEMICONDUCTOR
|
| QIP0640001 |
Asymmetrical Half Bridge IGBT H-Series Hermetic Module (400 Amperes/600 Volts) 400 A, 600 V, N-CHANNEL IGBT
|
Littelfuse, Inc.
POWEREX[Powerex Power Semiconductors]
|
| APT4020BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 23; RDS(on) (Ohms): 0.2; BVDSS (V): 400; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi, Corp.
|
|
