| PART |
Description |
Maker |
| V53C256AP60 V53C256AP70 V53C256AJ80 V53C256AJ60 V5 |
256K X 1 FAST PAGE DRAM, 60 ns, PDIP16
256K X 1 FAST PAGE DRAM, 70 ns, PDIP16
256K X 1 FAST PAGE DRAM, 80 ns, PQCC18
256K X 1 FAST PAGE DRAM, 60 ns, PQCC18
256K X 1 FAST PAGE DRAM, 100 ns, PQCC18
|
MOSEL-VITELIC
|
| MCM40100 MCM40100S10 MCM40100S80 MCM40100SG10 MCM4 |
1M x 40 Bit Dynamic Random Access Memory Module 1M X 40 FAST PAGE DRAM MODULE, 80 ns, SMA72
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 1M X 40 FAST PAGE DRAM MODULE, 100 ns, SMA72
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| MN414170SJ-08 MN4117400TTR-08 |
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40
4M X 4 FAST PAGE DRAM, 80 ns, PDSO24
|
PANASONIC CORP
|
| MN414170CTT |
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40
|
PANASONIC CORP
|
| MSM514256B-60ZS |
256K X 4 FAST PAGE DRAM, 60 ns, PZIP19
|
OKI ELECTRIC INDUSTRY CO LTD
|
| UPD424190ALE-70 UPD424190AG5M-70 |
256K X 18 FAST PAGE DRAM, 70 ns, PDSO40
|
|
| MCM54260BT80 |
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40
|
MOTOROLA INC
|
| HYM564214AH-60 HYM572103LN-70 HYNIXSEMICONDUCTORIN |
2M X 64 EDO DRAM MODULE, DMA200
1M X 72 FAST PAGE DRAM MODULE, DMA168
2M X 64 FAST PAGE DRAM MODULE, DMA72
1M X 64 EDO DRAM MODULE, DMA72
2M X 32 EDO DRAM MODULE, DMA72
|
HYNIX SEMICONDUCTOR INC
|
| TC514256AJ-10EL |
256K X 4 FAST PAGE DRAM, 100 ns, PDSO20
|
|
| Q67100-Q2077 Q67100-Q2078 HM72V400 HYM72V4000GS-50 |
4M x 72 Bit ECC DRAM Module
From old datasheet system
4M x 72-Bit Dynamic RAM Module 4M X 72 FAST PAGE DRAM MODULE, 50 ns, DMA168
4M x 72-Bit Dynamic RAM Module 4M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
4M x 72-Bit Dynamic RAM Module 4米72位动态随机存储器模块
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
