| PART |
Description |
Maker |
| 2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| 2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
|
USHA India LTD
|
| 2SB1219A |
Large collector current IC. Collector-base voltage VCBO -60 V
|
TY Semiconductor Co., Ltd
|
| 2SC2463 |
Low frequency amplifier. Collector-base voltage VCBO 55 V
|
TY Semiconductor Co., Ltd
|
| 2SC2462 |
Low frequency amplifier. Collector-base voltage VCBO 50 V
|
TY Semiconductor Co., Ltd
|
| 2SD1007 |
High collector to emitter voltage: VCEO 120V.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|
| BC859W BC859BW |
Low current (max. 100 mA). Low voltage (max. 45 V). Collector-base voltage VCBO -30
PNP General Purpose Transistor
|
TY Semiconductor Co., Ltd
TY Semicondutor
|
| PBSS5140S PBSS4140S_1 PBSS4140S |
40 V low VCEsat PNP transistor
From old datasheet system
40 V low VCEsat NPN transistor
|
NXP Semiconductors
Philips Semiconductors
|
| 2PB709AS 2PB709AR |
Low current (max. 100 mA) Low voltage (max. 45 V).Collector-base voltage VCBO -45 V
|
TY Semiconductor Co., Ltd
|
| 2SB1537 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
