| PART |
Description |
Maker |
| GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 11 ns, PQFP100
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器
2M Synchronous Burst SRAM 200万同步突发静态存储器
Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm
64K x 32 / 2M Synchronous Burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| IDT6178S IDT6178S10D IDT6178S10DB IDT6178S10P IDT6 |
CMOS StaticRAM 16K (4K x 4-BIT) CACHE-TAG RAM
Low-Power JFET-Input Operational Amplifier 8-PDIP 0 to 70 4K X 4 CACHE TAG SRAM, 15 ns, CDIP22
Dual Low-Power JFET-Input General-Purpose Operational Amplifier 8-SOIC 0 to 70 4K X 4 CACHE TAG SRAM, 15 ns, PDSO24
CMOS StaticRAM 16K (4K x 4-BIT) CACHE-TAG RAM 4K X 4 CACHE TAG SRAM, 25 ns, PDSO24
CMOS StaticRAM 16K (4K x 4-BIT) CACHE-TAG RAM 4K X 4 CACHE TAG SRAM, 25 ns, CDIP22
IC 8-BIT BUS SW 2-PORT 20-QSOP
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| CY7C1358A-100AC |
64K X 18 CACHE TAG SRAM, 3.8 ns, PQFP100
|
CYPRESS SEMICONDUCTOR CORP
|
| GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| MCM69T618 MCM69T618TQ5 MCM69T618TQ5R |
64K x 18 Bit Synchronous Pipelined Cache Tag RAM
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
|
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| MPC2604GAZP66R |
32K X 36 CACHE TAG SRAM, 10 ns, PBGA357
|
MOTOROLA INC
|
| GVT7164T18 7164T18S |
64K X 18 SYNCHRONOUS TAG SRAM
From old datasheet system
|
Galvantech
|
| MCM69F618CTQ12 MCM69F618CTQ12R MCM69F618CTQ10 MCM6 |
64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM 64K X 18 CACHE SRAM, 12 ns, PQFP100
64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM 64K X 18 CACHE SRAM, 9 ns, PQFP100
|
MOTOROLA[Motorola, Inc]
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| WMYP64K32V-10TQM WMYP64K32V-8TQI WMYP64K32V-10TQI |
64K X 32 CACHE SRAM, 10 ns, CQFP100
64K X 32 CACHE SRAM, 8 ns, CQFP100
|
Maxim Integrated Products, Inc.
|
| PDM44058S5J PDM44058S4.5JTR |
64K X 18 CACHE SRAM, PQCC52
|
|
| PDM44058S12J PDM44058S15J |
64K X 18 CACHE SRAM, PQCC52
|
|
