| PART |
Description |
Maker |
| TC514101AJ-70 TC514101AP-80 |
4M X 1 NIBBLE MODE DRAM, 70 ns, PDSO20
4M X 1 NIBBLE MODE DRAM, 80 ns, PDIP18
|
|
| LH21256Z-12 LH21256Z-15 LH21256-10 LH21256-12 LH21 |
x1 Page Mode DRAM
x1 Nibble Mode DRAM x1半字节模式DRAM
|
Sharp Electronics, Corp.
Rubycon, Corp.
|
| HM511001AZP-10 HM511001AZP-7 HM511001AZP-12 HM5110 |
x1 Nibble Mode DRAM x1半字节模式DRAM
|
DB Lectro, Inc.
ITT, Corp.
Omron Electronics, LLC
|
| AS4C256K16F0-30TC AS4C256K16F0-50TC AS4C256K16F0-5 |
5V 256K X 16 CMOS DRAM (Fast Page Mode)
256K X 16 FAST PAGE DRAM, 50 ns, PDSO40
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Alliance Semiconductor Corp...
Electronic Theatre Controls, Inc.
|
| AAA2800 AAA2801 |
(AAA2800 Series) Static Column Decode Mode CMOS 256k x 1 DRAM
(AAA2800 Series) Page Mode CMOS 256k x 1 DRAM
|
NMB Technologies
|
| V53C16258L V53C16258SLT40 V53C16258SLT45 V53C16258 |
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
256K X 16 EDO DRAM, 50 ns, PDSO40
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL-VITELIC
|
| IS41LV16257B-35K IS41LV16257B-35T |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 256K X 16 FAST PAGE DRAM, 35 ns, PDSO40
|
Integrated Silicon Solution, Inc.
|
| KM44C256A |
256k x 4Bit CMOS DRAM with Fast Page Mode
|
Samsung Electronics
|
| MT4C4256 |
256K x 4 DRAM Standard Or Low Power, Extended Refresh(标准或低功率，扩展刷新，256K x 4动态RAM)
|
Micron Technology, Inc.
|
| V53C104D V53C104DP60L V53C104DP70 V53C104DP70L V53 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
