| PART |
Description |
Maker |
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存
64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K9F8008W0M- K9F8008W0M-TCB0 K9F8008W0M-TIB0 K9K120 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
1M x 8 bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM29W8000IT |
1M x 8 Bit NAND Flash Memory(1M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MT29F8G08DAAWCA MT29F8G08BAAWPA |
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
1G X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Micron Technology
|
| K9F2808U0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-YIB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit NAND Flash Memory 1,600 × 8位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HY27UA081G1M HY27SA1G1M HY27SA161G1M-TPCB |
(HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
64M X 16 FLASH 1.8V PROM, 12000 ns, PDSO48
|
Hynix Semiconductor Inc.
|
| 29F32G08C |
NAND Flash Memory
|
Micron
|
| K9K1208U0M K9K1208U0M-YCB0 K9K1208U0M-YIB0 K9K1216 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
64M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| ML54051 |
NAND Flash Memory Controller
|
OKI electronic componets
|
| KM29W32000TS |
4M x 8-Bit NAND Flash Memory
|
Samsung Semiconductor
|
| MT29F32G08CBABA MT29F128G08CJABB MT29F128G08CABA M |
(MT29Fxxxxxxxx) NAND Flash Memory
|
Micron
|
