PART |
Description |
Maker |
AEC-6913-A1M-1010 AEC-6913-A2M-1010 |
Design for Industrial Automation, Reliable Design: RS-422/485 10x. DIO
|
AAEON Technology
|
CM200TU-12F |
240 x 128 pixel format, CFL Backlight with power harness Trench Gate Design Six IGBTMOD⑩ 200 Amperes/600 Volts Trench Gate Design Six IGBTMOD 200 Amperes/600 Volts Trench Gate Design Six IGBTMOD?/a> 200 Amperes/600 Volts
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POWEREX[Powerex Power Semiconductors]
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TOP233YN TOP233G-TL TOP233PN TOP232G-TL TOP232GN T |
Family Design Flexible,EcoSmart, Intergrated OFff-line Switcher nullDesign Flexible, EcoSmart, Integrated Off-line Switcher 1.6 A SWITCHING REGULATOR, 140 kHz SWITCHING FREQ-MAX, PDIP7 0.8 A SWITCHING REGULATOR, 140 kHz SWITCHING FREQ-MAX, PDIP7 0.300 INCH, PLASTIC, DIP-8/7 TOPSwitch-FX Family Design Flexible, EcoSmart?, Integrated Off-line Switcher 0.8 A SWITCHING REGULATOR, 140 kHz SWITCHING FREQ-MAX, PDSO8 Family Design Flexible/EcoSmart/ Intergrated OFff-line Switcher Analog IC 0-75 W Flyback design energy efficient 0-75糯反激式设计节 Design Flexible, EcoSmart, Integrated Off-line Switcher
|
Power Integrations, Inc... Power Analog Micoelectronics POWER INTEGRATIONS INC Power Integrations Inc. Micrel Semiconductor, Inc.
|
IDT77915 IDT77914 |
NICStAR Reference Design 155Mbps Network Interface Card NIC NICStAR⑩ Reference Design 155Mbps Network Interface Card NIC NICStARReference Design 155Mbps Network Interface Card NIC NICStAR⑩参考设155Mbps网卡网卡
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts HIGH POWER SWITCHING USE INSULATED TYPE Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor Powerex Power Semiconductors
|
MIC915 MIC915BMM |
10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN 10000 SYSTEM GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN Dual 135MHz Low-Power Op Amp
|
Micrel Semiconductor,Inc.
|
CM100TU-24F |
Trench Gate Design Six IGBTMOD100 Amperes/1200 Volts Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts Trench Gate Design Six IGBTMOD?/a> 100 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
HSDL-1001011 HSDL-1001012 HSDL-1001S04 HSDL-100100 |
IrDA 1.0 Compliant 115.2Kb/s 3-5V T.ceiver. Top Optn. Sample Strip(10units/strip)-not for new design 红外1.0兼容115.2Kb / s - 5V的T.ceiver。热门Optn。样带(10units/strip),而不是用于新设计 IrDA 1.0 Compliant 115.2Kb/s 3-5V T/ceiver. Mid Optn.Sample Strip (10units/strip) not for new design 红外1.0兼容115.2Kb / s - 5V的吨/ ceiver。半山Optn.Sample地带0units/strip)不得用于新设计 IrDA 1.0 Compliant 115.2Kb/s 3-5V T/ceiver. Front Optn. Integrated Shield - not for new design 红外1.0兼容115.2Kb / s - 5V的吨/ ceiver。前Optn。综合盾-不是用于新设 IrDA 1.0 Compliant 115.2Kbs 3-5V Transceiver.Top Option. Tape & Reel(NOT RECOMMENDED FOR NEW DESIGN) 红外1.0兼容115.2Kbs 3 - 5V的Transceiver.Top选项。胶 IrDA 1.0 Compliant 115.2Kbs 3-5V Transceiver.Front Opt.Tape & Reel(not recommended for new design) 红外1.0兼容115.2Kbs 3 - 5V的Transceiver.Front Opt.Tape IrDA 1.0 Compliant 115.2Kbs 3-5V Transceiver. Mid Option.Tape & Reel(not recommended for new design) 红外1.0兼容115.2Kbs 3 - 5V的收发器。中秋节Option.Tape
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TE Connectivity, Ltd. OKI SEMICONDUCTOR CO., LTD. Avago Technologies, Ltd. Diodes, Inc.
|
XCV812E-6FGG900C XCV812E-7FGG900C XCV812E-6FGG900I |
XCV812E-6FGG900C - NOT RECOMMENDED for NEW DESIGN FPGA, 4704 CLBS, 254016 GATES, 357 MHz, PBGA900 XCV812E-7FGG900C - NOT RECOMMENDED for NEW DESIGN FPGA, 4704 CLBS, 254016 GATES, 400 MHz, PBGA900 XCV812E-6FGG900I - NOT RECOMMENDED for NEW DESIGN FPGA, 4704 CLBS, 254016 GATES, 357 MHz, PBGA900
|
Xilinx, Inc.
|
CM50DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 50 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD⑩ 50 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 50 Amperes/1200 Volts
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Powerex Power Semiconductors
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