| PART |
Description |
Maker |
| TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| IBM13M32734BCB |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2，银行注册内存模块（32M × 72配置2组寄存同步动态内存模块）
|
International Business Machines, Corp.
|
| KM23V32000CT KM23V32000CET |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM) 32兆位Mx8 / 2Mx16）的CMOS掩模ROM2兆位Mx8 / 2Mx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| TC58NS256ADC |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia)
|
TOSHIBA
|
| UPD4632312AF9-BE85X-BC2 UPD4632312AF9-BE75X-BC2 UP |
32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 32兆位CMOS移动指明内存200万字6位温度范
CONNECTOR ACCESSORY
|
NEC, Corp.
NEC Corp.
|
| MX25L3205A |
32M-BIT [x 1] CMOS SERIAL eLiteFlash MEMORY
|
Macronix International
|
| KM23C32000C |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| MX29LV033ATI-90G MX29LV033ATC-90G MX29LV033ATI-70 |
32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY
|
ETC[ETC]
|
| MX25L3237D MX25L3237DMI12G |
32M-BIT [x 1/x 2/x4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L3225DM2I10G |
32M-BIT [x 1/x 2/x4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L3239E MX25L3239EM2I10G MX25L3239EMBI10G |
32M-BIT [x 1 / x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
