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NPT25015 - Gallium Nitride 28V, 23W RF Power Transistor Thermally-enhanced industry standard package

NPT25015_7726025.PDF Datasheet


 Full text search : Gallium Nitride 28V, 23W RF Power Transistor Thermally-enhanced industry standard package


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NPT25015 NPT25015-15 Gallium Nitride 28V, 23W RF Power Transistor
Thermally-enhanced industry standard package
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D1053 D1053UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应50W-28V-1GHz,推挽) 金镀金属多功能硅的DMOS射频场效应管50 28V 1GHz的,推挽式)(镀金多用的DMOS射频硅场效应管(50 28V 1GHz的,推挽式)
METAL GATE RF SILICON FET
3M Company
SEME-LAB[Seme LAB]
WP710A10ID5V The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
Kingbright Corporation
L680 DGSK8-025A DGS3-025AS DGS4-025A Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
From old datasheet system
IXYS, Corp.
IXYS[IXYS Corporation]
WP710A10YD5V The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
Kingbright Corporation
DGS20-018AS Gallium Arsenide Schottky Rectifier 23 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
From old datasheet system
IXYS, Corp.
IXYS[IXYS Corporation]
DGS9-03AS DGS10-03A Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
IXYS, Corp.
IXYS[IXYS Corporation]
0809LD30P Compant High-Insulation Power Relay, Polarized, 10A
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
DSEP30-06A DGS19-025AS DGSK40-025A DGSK40-025AS DG Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
HiPerFRED Epitaxial Diode with soft recovery
IXYS, Corp.
IXYS[IXYS Corporation]
 
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