| PART |
Description |
Maker |
| SHD244702 |
LOW RDS HERMETIC POWER MOSFET - P-CHANNEL
|
SENSITRON[Sensitron]
|
| SHD219701 |
LOW RDS HERMETIC POWER MOSFET - N-CHANNEL
|
Sensitron
|
| SHD226701 |
LOW RDS(on) HERMETIC POWER MOSFET - N-CHANNEL
|
Sensitron
|
| IRFR5305PBF IRFU5305PBF IRFR5305TRPBF IRFR5305TR I |
Ultra Low On-Resistance
HEXFET㈢ Power MOSFET ( VDSS = -55V , RDS(on) = 0.065ヘ , ID = -31A )
HEXFET? Power MOSFET ( VDSS = -55V , RDS(on) = 0.065Ω , ID = -31A )
31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
| IRFIZ48G IRFIZ48 IRFIZ48GPBF |
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=39A)
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) 功率MOSFET（减振钢板基本\u003d 60V的，的Rdson）\u003d 0.018ohm，身份证\u003d 37A条）
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A)
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| IRFR3709ZPBF IRFU3709ZPBF IRFR3709ZTRR IRFR3709ZTR |
30 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 6.5mヘ , Qg = 17nC )
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 6.5mΩ , Qg = 17nC )
High Frequency Synchronous Buck Converters for Computer Processor Power
|
International Rectifier
|
| GFC448 |
N Channel Power MOSFET with low RDS(on)
|
Gunter Seniconductor GmbH.
|
| GFCC30 |
N Channel Power MOSFET with low RDS(on)
|
Gunter Seniconductor GmbH.
|
| IRFU320 IRFR320 IRFR320PBF IRFR320TR IRFR320TRL IR |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Power MOSFET(Vdss=400V Rds(on)=1.8ohm Id=3.1A)
Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=3.1A)
400V Single N-Channel HEXFET Power MOSFET in a D-Pak package
|
IRF[International Rectifier]
|
| IRHYK57133CMSE IRHYK57133CMSEPBF |
20 A, 130 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, TO-257AA, 3 PIN
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
|
International Rectifier, Corp.
Integrated Device Technology, Inc.
IRF[International Rectifier]
|
| IRFD9120 |
-100V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A)
Power MOSFET(Vdss=-100V Rds(on)=0.60ohm Id=-1.0A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=-100V/ Rds(on)=0.60ohm/ Id=-1.0A)
|
IRF[International Rectifier]
|
