| PART |
Description |
Maker |
| BC847BPDW1T1 BC847CPDW1T1 BC848BPDW1T1 BC846BPDW1T |
Dual General Purpose Amplifier Transistors (NPN PNP)(-45V通用型双放大器晶体管(NPN PNP，SOT-363封装)) 100 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
From old datasheet system
Dual General Purpose Transistors(NPN/PNP Duals)
|
ON Semiconductor
|
| PUMX1 |
40 V, 100 mA NPN/NPN general-purpose transistor
|
NXP Semiconductors
|
| BC847DS |
100 mA NPN/NPN general-purpose transistor
|
NXP
|
| BC847DS |
45 V, 100 mA NPN/NPN general-purpose transistor
|
NXP Semiconductors
|
| 2PC4081S135 |
NPN general-purpose transistor - Complement: 2PA1576S ; fT min: 100 MHz; hFE max: 560 ; hFE min: 270 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 40 V; Package: SOT323 (SC-70); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| BC547B BC547C BC546A BC547 BC546_547_3 BC546 BC547 |
TRANSISTOR BIPOLAR 双极晶体
From old datasheet system
32Mb CellularRAM
NPN general purpose transistors 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Vishay Semiconductors
Philips Semiconductors
NXP Semiconductors N.V.
|
| BC847CMB BC847AMB BC847BMB |
45 V, 100 mA NPN general-purpose transistors
|
NXP Semiconductors
|
| BC847BPN |
45 V, 100 mA NPN/PNP general-purpose transistor
|
NXP Semiconductors
|
| PDTC115E PDTC115EE PDTC115EEF PDTC115EK PDTC115EM |
NPN resistor-equipped transistors; R1 = 100 kohm, R2 = 100 kohm 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
