| PART |
Description |
Maker |
| SFH4205 Q62702-P5165 Q62702-P978 SFH4200 |
Schnelle GaAs-IR-Lumineszenzdiode (950 nm),High-Speed GaAs Infrared Emitter (950 nm)
High-Speed GaAs Infrared Emitter (950...
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| TLN110 |
INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| SRD00212Z SRD00212 Q62702-P3010 Q62702-P784 Q62702 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
Ternary PIN Photodiode in TO-Package with Integrated Optics
From old datasheet system
|
SIEMENS A G
Infineon Technologies AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| LD271 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Semiconductor Group
|
| SFH405 |
GaAs Infrared Emitter
|
OSRAM GmbH
|
| OPE5294 |
GaAs Infrared Emitter
|
OPTEK Technologies
|
| MTE8080F |
Infrared Emitter
5mm Water Clear Truncated IR Emitter
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
| MTE2050-OH1 |
CAP 10PF 100V 5% NP0(C0G) RAD.10 .15X.15 BULK 红外线发射器
5MM WATER CLEAR IR EMITTER
Infrared Emitter
|
Marktech Corporate
Marktech Optoelectronics
|
| TLN233 |
TOSHIBA Infrared LED GaALAs Infrared Emitter
|
TOREX SEMICONDUCTOR LTD.
Toshiba Semiconductor
|
| LED55BF LED55CF LED56F |
GAAS INFRARED EMITTIN DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
