PART |
Description |
Maker |
NX5323EH |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
NX6309GH NX6309GH-15 |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
NX5311 |
1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
|
California Eastern Laboratories
|
NX6406GK-AZ NX6406 NX6406GH-AZ |
NECs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
CEL[California Eastern Labs]
|
NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
VGQ-32UA VGL-32CA VGL-32FA VGL-32HA VGL-32SA VGP-3 |
FTTH-VG Optical Communication V Groov Board
|
MITSUMI[Mitsumi Electronics, Corp.]
|
NX5521 NX5521EH |
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
PAS5351 PAS5361 |
Gigabit Ethernet PON Burst Receiver
|
PMC-Sierra
|
FTM-9712S-SL20 FTM-9712S-SL20E FTM-9712S-SL20EG FT |
SC Receptacle SFP GE-PON OLT Transceiver
|
Source Photonics, Inc.
|
FTM-9412P-F20F |
2x5 SFF GE-PON ONU Transceiver
|
Fiberxon
|
VSC7716 |
1.25 Gbps Burst Mode Transimpedance Amplifier for GE-PON (EPON) Systems
|
Vitesse Semiconductor Corporation
|
DS1863E DS1863ER DS1863ET DS1863 DS26522 DS26522G |
Dual T1/E1/J1 Transceiver Burst-Mode PON Controller With Integrated Monitoring
|
MAXIM[Maxim Integrated Products]
|