PART |
Description |
Maker |
RJK5002DPD RJK5002DPD-00J2 RJK5002DPD-15 |
500V - 2.4A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK5013DPP-E0 RJK5013DPP-E0-15 |
500V - 14A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2 |
P-channel MOS FET(-30V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH From old datasheet system
|
NEC[NEC]
|
2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00 |
From old datasheet system P-CHANNEL MOS FET FOR HIGH SWITCHING P-channel MOS FET (-30V, -2A)
|
NEC[NEC]
|
APT50M80B2VFR APT50M80 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 58A 0.080 Ohm
|
Advanced Power Technolo... ADPOW[Advanced Power Technology]
|
APT50M85B2VFR APT50M85LVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 56A 0.085 Ohm
|
Advanced Power Technolo... Advanced Power Technology
|
APT5014LVR |
POWER MOS V 500V 37A 0.140 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT5024BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 22A 0.240 Ohm
|
Advanced Power Technology Ltd.
|
APT50M50 APT50M50PVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 74.5A 0.050 Ohm
|
Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
|