PART |
Description |
Maker |
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
BD433 BD435 BD436 BD438 4127 BD437 BD434 -BD437 |
Complemetary Silicon Power Transistors(浜?ˉ纭?????浣??) From old datasheet system COMPLEMENTARY SILICON POWER TRANSISTORS Complemetary Silicon Power Transistors(互补硅功率晶体管)
|
STMICROELECTRONICS[STMicroelectronics] 意法半导
|
2N6388 2N6387 |
DARLINGTON NPN SILICON POWER TRANSISTORS Plastic Medium-Power Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
MJE2955T |
Silicon NPN Power Transistors Silicon PNP Power Transistors MJE2955T Silicon PNP Power Transistors MJE2955T
|
Savantic, Inc.
|
2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp. BOCA[Boca Semiconductor Corporation]
|
2SA489 2SA490 |
Silicon NPN Power Transistors Silicon PNP Power Transistors
|
Savantic, Inc.
|
2SA963 |
Silicon NPN Power Transistors Silicon PNP Power Transistors
|
Savantic, Inc.
|
MJ2955 |
Silicon NPN Power Transistors Silicon PNP Power Transistors
|
Savantic, Inc.
|
BD132 |
Silicon NPN Power Transistors Silicon PNP Power Transistors
|
Savantic, Inc. http://
|
MJ15023 |
Silicon NPN Power Transistors Silicon PNP Power Transistors
|
Savantic, Inc.
|