| PART |
Description |
Maker |
| MMZ25332B |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
| MMA20312BV |
Heterojunction Bipolar Transistor Technology
|
Freescale Semiconductor...
|
| MMG3009NT108 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMG3008NT1 |
Heterojunction Bipolar Transistor(InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MT3S113P |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|
| MT3S111P |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
TOSHIBA
|
| MMG3004NT1 MMG3004NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMG3006NT1 MMG3006NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMA20312B |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor...
|
| IMZ2A |
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
|
Pan Jit International Inc.
|
