| PART |
Description |
Maker |
| TM4-GT |
RF IMPEDANCE TRANSFORMER SURFACE MOUNT MODEL WIDE BANDWIDTH 5 - 1000 MHz
|
SYNERGY MICROWAVE CORPORATION
|
| TM1-0 |
RF IMPEDANCE TRANSFORMER SURFACE MOUNT MODEL WIDE BANDWIDTH 0.30 - 1000 MHz
|
SYNERGY MICROWAVE CORPORATION
|
| TM1-6 |
RF IMPEDANCE TRANSFORMER SURFACE MOUNT MODEL WIDE BANDWIDTH 5 - 3000 MHz
|
SYNERGY MICROWAVE CORPORATION
|
| 2SK246 E001482 |
FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-DC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS
From old datasheet system
|
Toshiba
|
| 2SK246 |
N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT/ IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SK246 |
Field Effect Transistor Silicon N Channel Junction Type For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
|
TOSHIBA
|
| C1099-ALD C1099-ALB |
PoE transformer, for MAX5941A, SMT, RoHS SMPS TRANSFORMER
Flyback Transformer
|
Coilcraft, Inc.
Coilcraft lnc.
|
| MH1500AM MT500AM MH250AE MH250AJ MH250JE MH1000PR |
POWER TRANSFORMER, 1500 VA
POWER TRANSFORMER, 500 VA
POWER TRANSFORMER, 250 VA
POWER TRANSFORMER, 1000 VA
POWER TRANSFORMER, 750 VA
|
|
| 2SK246 2SK246GR 2SK246BL K246 2SK246Y |
N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT/ IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| Z2603 Z2612 Z2610 Z2613 |
TRANSFORMER 6VA 2X 18V
TRANSFORMER 4VA 2X 12V 12V的变压器4VA 2
TRANSFORMER 6VA 2X 24V 24V的变压器6VA
TRANSFORMER 6VA 2X 12V 12V的变压器6VA 2
|
Toshiba, Corp.
Lattice Semiconductor, Corp.
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
