PART |
Description |
Maker |
1N1183 1N1183R |
DEVICE HIGH POWER STANDARD
|
America Semiconductor, LLC
|
SBH52414N-FSAN SBH52414Z-FSAN SBH52414G-FSAN SBH52 |
High Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving 高功率比迪光学标准模310纳米发光550纳米接收 2 GANG DEEP DEVICE BOX SCA-294 Components and FTTx solutions - Tx 1310nm/Rx 1550nm High Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
|
INFINEON[Infineon Technologies AG]
|
ICS97U2A845A ICS97U2A845AHLF-T |
Double the drive of the standard 97U877 device 1.8V Low-Power Wide-Range Frequency Clock Driver
|
Integrated Device Techn... Integrated Circuit Systems
|
AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix) High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28 High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
|
ETC[ETC] ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp. Alliance Semiconductor ...
|
AS8650A-ZQFP-01 |
High-efficient Power Management Device with High-speed CAN Interface
|
austriamicrosystems AG
|
TPD4135AK |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
TPD4123K |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
TPD4122K |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
TPD4125K |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
TPD4102K |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC 东芝智能功率器件单片硅高压功率IC
|
Toshiba, Corp. Toshiba Semiconductor
|
BUL62A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|