PART |
Description |
Maker |
EGP10GT50A EGP10JT50A EGP10KT50R EGP10D EGP10B |
Fast Rectifiers (Glass Passivated) 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
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FAIRCHILD SEMICONDUCTOR CORP
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JAN1N3612 JANTX1N3957 |
DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, EG1, 2 PIN, Signal Diode DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL, Signal Diode
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Vishay Semiconductors
|
BYD33DGP-HE3 BYD33GGP-E3 |
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL
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Vishay Semiconductors
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BYM06-400 BYM06-600 BYM06-100 BYM06-50 |
0.5 A, 400 V, SILICON, SIGNAL DIODE 0.5 A, 600 V, SILICON, SIGNAL DIODE 0.5 A, 100 V, SILICON, SIGNAL DIODE 0.5 A, 50 V, SILICON, SIGNAL DIODE
|
Vishay Intertechnology, Inc. Spacecraft Components, Corp.
|
1N4003-A 1N4004-A 1N4003-T 1N4002L-T 1N4006L-T 1N4 |
1.0A RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1.0A RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1.0A RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE 1.0A RECTIFIER 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc. Diodes, Inc.
|
BYM11-50 BYM11-800 BYM11-600 BYM11-400 BYM11-100 B |
1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2 1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2 Surface Mount Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A
|
Vishay Beyschlag
|
JANTX1N4454 JANTX1N4454-1 JANTXV1N4454-1 1N4454 1N |
Signal or Computer Diode Silicon Switching Diode DO-35 Glass Package 0.2 A, SILICON, SIGNAL DIODE, DO-35
|
MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|
1N581707 1N5819-E3/54 1N5819-E3/73 1N5819-E3_54 1N |
DIODE 1 A, 40 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode Schottky Barrier Rectifiers
|
Vishay Semiconductors Vishay Siliconix
|
1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35 SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
ESH1B-E3 |
DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
MSS1P6-M3/89A MSS1P5-M3/89A MSS1P5HM3/89A |
1 A, 60 V, SILICON, SIGNAL DIODE HALOGEN FREE AND ROHS COMPLIANT, MICROSMP-2 1 A, 50 V, SILICON, SIGNAL DIODE
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Vishay Beyschlag VISHAY SEMICONDUCTORS
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