PART |
Description |
Maker |
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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STE36N50-DA |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
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STMicroelectronics ST Microelectronics
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BSS91 |
N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N Channel Enhancement Mode Vertical D-MOS Transistor Capacitor Kit;Contents Of Kit:36 different values, 20 pcs. per value
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NXP Semiconductors Philips Semiconductors
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STP5NA60 STP5NA60FI 3065 |
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET) N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
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ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics]
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APT10035B2FLL APT10035LFLL |
POWER MOS 7 1000V 28A 0.350 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No
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Advanced Power Technology Ltd.
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STW80N06-10 4868 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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STT3434 |
N-Channel Enhancement Mode Mos.FET N-Channel Enhancement Mode Power Mos.FET
|
SeCoS Halbleitertechnologie GmbH
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SD1107DD SD1107CHP SD1117DD SD1117CHP |
100 V, 4 ohm, N-channel enhancement-mode D-MOS power FET 60 V, 2.5 ohm, N-channel enhancement-mode D-MOS power FET
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Topaz Semiconductor
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STP80N06-1 STP80N06-10 4888 |
From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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APT8014L2LL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 800V 52A 0.140 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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Advanced Power Technology http://
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APT50M65B2FLL APT50M65LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 500V 67A 0.065 Ohm
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Advanced Power Technology Ltd.
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APT20M10JLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 200V 185A 0.010 Ohm
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Advanced Power Technology Ltd.
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