| PART |
Description |
Maker |
| BGA61408 |
Silicon Germanium Broadband MMIC Amplifier
|
Infineon Technologies AG
|
| SGA-3563 SGA-3563Z |
SGA-3563 DC-5.0 GHz Cascadeable MMIC Amplifier
DC-5000 MHz Silicon Germanium Cascadable HBT MMIC Amplifier DC - 5000 MHz的硅锗MMIC放大器级联异质结双极晶体
|
Electronic Theatre Controls, Inc.
sirenza.com
|
| UPC3225TB-E3 UPC3225TB-E3-A |
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
NEC
|
| UPC3236TK-E2 UPC3236TK-E2-A UPC3236TK |
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
NEC
|
| SGA-3586 SGA-3586Z |
DC-5000 MHz Silicon Germanium Cascadable HBT MMIC Amplifier
|
SIRENZA MICRODEVICES
|
| SGL0622Z |
5MHz to 4000MHz LOW NOISE MMIC AMPLIFIER SILICON GERMANIUM
|
RF Micro Devices
|
| BGT24MTR11 |
16/32-Bit Single-Chip Microcontroller
Silicon Germanium 24 GHz Transceiver MMIC
|
Infineon Technologies AG
Infineon Technologies A...
|
| BGA61208 |
Silicon Germanium Broadband MMIC Amplifier
0 MHz - 2800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Infineon Technologies AG
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| BFR750L3RH |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| NESG260234-T1 NESG260234 NESG260234-T1-AZ |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell
CEL[California Eastern Labs]
|
