PART |
Description |
Maker |
BGT24AT2 |
Silicon Germanium 24 GHz Transmitter MMIC
|
Infineon Technologies A...
|
BGU7003 |
Wideband Silicon Germanium Low-noise Amplifier MMIC
|
Philips Semiconductors
|
UPC3225TB-E3 UPC3225TB-E3-A |
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
NEC
|
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
|
1N128 |
Germanium Diodes / Germanium Rectifiers
|
ETC
|
BF776 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
BFP650F |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
NESG3400M01 NESG3400M01-T1 |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
NESG3032M14-T3-A NESG3032M14-A |
NPN SILICON GERMANIUM RF TRANSISTOR
|
California Eastern Laboratories
|
BFR740L3 |
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
SGA-9289 |
Silicon Germanium HBT Amplifier
|
Stanford Microdevices
|
BFP620 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|