PART |
Description |
Maker |
ZVNL120G |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET SOT223 N-CHANNEL ENHANCEMENT MODE
|
Zetex Semiconductors Diodes Incorporated
|
STP7NB40FP STP7NB40 5584 |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N - CHANNEL ENHANCEMENT MODE PowerMESH TM MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
|
ST Microelectronics 意法半导 STMicroelectronics
|
STP9NB50FP STP9NB50 5368 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N沟道增强模式PowerMESHTM MOSFET的(不适用沟道增强模式MOSFET的) From old datasheet system N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
|
STMicroelectronics N.V. 意法半导
|
VN2410 VN2406 |
N-Channel Enhancement-Mode Vertical DMOS FET(击穿电压240V,10Ω,N沟道增强型垂直DMOS结构场效应管) N沟道增强型场效应管垂直的DMOS(击穿电40伏,10Ω沟道增强型垂直的DMOS结构场效应管 N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,10惟锛?娌??澧?己????茨MOS缁???烘?搴??) N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,6惟锛?娌??澧?己????茨MOS缁???烘?搴??)
|
Elan Microelectronics, Corp. ELAN Microelctronics Corp .
|
AP15P15GM-HF AP15P15GM-HF14 |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2.7 A, 140 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND ROHS COMPLIANT, SOP-8
|
Advanced Power Electronics Corp. Advanced Power Electronics, Corp.
|
TN2010T |
N-Channel Enhancement-Mode MOSFET(最小漏源击穿电00V,夹断电.12AN沟道增强型MOSFET晶体 N-Channel Enhancement-Mode MOSFET Transistor
|
Vishay Intertechnology,Inc. ETC
|
IRF82 IRF822 IRF82FI IRF822FI -IRF82 IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
|
SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
2N6781 2N6782 |
100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET 60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET N-CHANNEL ENHANCEMENT-MODE D-MOS PWER FETS
|
Topaz Semiconductor List of Unclassifed Manufacturers
|
STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(N沟道增强模式高密度功率MOS晶体管) N沟道增强模式“超高密度”功率MOS晶体管(不适用沟道增强模式高密度功率马鞍山晶体管) N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
P412025 PS4125 P411825 P412225 P412425 |
POW-R-BLOK Single Diode Isolated Module (2500 Amperes / Up to 2400 Volts) POW - r的,单台BLOk反应腔二极管隔离模块(二五?安高达2400伏特
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|