| PART |
Description |
Maker |
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| AD600AR-REEL AD600SQ/883B AD600AR-REEL7 |
Dual, Low Noise, Wideband Variable Gain Amplifier, 0 dB To 40 dB Gain; Package: SOIC - Wide; No of Pins: 16; Temperature Range: Industrial SPECIALTY ANALOG CIRCUIT, PDSO16
Dual, Low Noise, Wideband Variable Gain Amplifier, 0 dB To 40 dB Gain; Package: CerDIP; No of Pins: 16; Temperature Range: Military SPECIALTY ANALOG CIRCUIT, CDIP16
|
Analog Devices, Inc.
|
| 5962-9457201MEA 5962-9457202MEA |
Dual , Low Noise, Wideband Variable Gain Amplifier, 0 dB To 40 dB Gain
Dual, Low Noise, Wideband Variable Gain Amplifier, -10 dB To 30 dB Gain
|
Analog Devices
|
| AD8353 AD8353ACP-REEL7 AD8353-EVAL AD8353ACP-R2 |
100 MHz-2.7 GHz RF Gain Block
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers
|
Analog Devices, Inc.
AD[Analog Devices]
|
| AD8354ACP-R2 AD8354-EVAL AD8354ACP-REEL7 |
100 MHz-2.7 GHz RF Gain Block
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers
|
Analog Devices, Inc.
|
| ADG936 ADG936-R |
Wideband 4 GHz 36 dB Isolation at 1 GHz CMOS 1.65V to 2.75V Dual SPDT
|
Analog Devices
|
| AD8302 AD8302ARU AD8302ARU-REEL AD8302ARU-REEL7 AD |
LF.2.7 GHz RF/IF Gain and Phase Detector
0.1 - 2.7 Ghz, Gain And Phase Detector (measures 60 DB / 180 Degrees)
|
AD[Analog Devices]
|
| BFG520W BFG520W_X BFG520W/X |
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistors
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BFG67_XR BFG67 BFG67_X BFG67X BFG67XR BFG67/XR BFG |
NPN 8 GHz wideband transistors
NPN 8GHz wideband transistor(NPN 8G赫兹 宽带晶体
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| YSF-322 |
Wideband Gain Amplifier
|
Mini-Circuits
|
| SA5219 |
Wideband variable gain amplifier
|
NXP Semiconductors
|
| SA5219D SA5219N SA5219 |
Wideband variable gain amplifier
|
PHILIPS[Philips Semiconductors]
|
