| PART |
Description |
Maker |
| VSMY7852X01-GS08 |
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Techno
|
Vishay Siliconix
|
| MCD413 AOD413 |
P-Channel 40-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| AOD404 MCD404 |
N-Channel 20-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| MC7415 |
P-Channel 20-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| MC4408 |
N-Channel 30-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| MC3406 |
N-Channel 30-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| MC8803 AO8803 |
P-Channel 20-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| FDC608PZ |
High performance trench technology for extremely low RDS
|
TY Semiconductor Co., Ltd
|
| FDN8601 |
High performance trench technology for extremely low rDS(on)
|
TY Semiconductor Co., Ltd
|
| FDG315N |
High performance trench technology for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| FDD3860 FDD386008 |
N-Channel PowerTrench MOSFET 100V, 29A, High performance trench technology for extremely low
|
Fairchild Semiconductor
|
