| PART |
Description |
Maker |
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| UPC1679 |
5 V-BIAS/ 5.5 dBm OUTPUT/ 1.8 GHz WIDEBAND Si MMIC AMPLIFIER
|
NEC
|
| UPC1678 UPC1678G UPC1678GV UPC1678G-E2 UPC1678G-E1 |
5 V-BIAS/ 7.5 dBm OUTPUT/ 2.0 GHz WIDEBAND Si MMIC AMPLIFIER
5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER
5 V-BIAS 7.5 dBm OUTPUT 2.0 GHz WIDEBAND Si MMIC AMPLIFIER
|
NEC[NEC]
|
| BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
| BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
| TIM1414-7-252 |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| PE15A1006 |
40 dB Gain, 1.1 dB NF, 15 dBm, 3.1 GHz to 3.5 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| TM005-020-12-24 |
0.5 - 2 GHz 24 dBm Module
|
Transcom, Inc.
|
| TA075-180-24-12 |
7.5 - 18 GHz 12 dBm Amplifier
|
Transcom, Inc.
|
| TM020-040-16-20 |
2 - 4 GHz 20 dBm Module
2 ? 4 GHz 20 dBm Module
|
Transcom, Inc.
|
| MGA-81563 MGA-81563-TR1 MGA-81563-BLK MGA81563 |
0.1- 6 GHz 3 V 14 dBm Amplifier
0.1- 6 GHz 3 V, 14 dBm Amplifier
0.1- 6 GHz 3 V / 14 dBm Amplifier
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| TM020-060-11-32 |
2 ~ 6 GHz 32 dBm Module
|
Transcom, Inc.
|
