| PART |
Description |
Maker |
| 1N5830 1N5830R 1N5831 1N5831R |
Schottky Power Diode, 25A
|
Naina Semiconductor ltd.
|
| MBR2545CT |
Schottky Barrier Power Rectifier(25A,45V肖特基势垒功率整流器) 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
|
ON Semiconductor
|
| SBT250-10L |
Schottky Barrier Diode (Twin Type ・ Cathode Common) 100V, 25A Rectifier
|
Sanyo Semicon Device
|
| SB250-09R |
90V, 25A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
SANYO[Sanyo Semicon Device]
|
| SBA250-09R |
Schottky Barrier Diode (Twin Type Cathode Common) 90V, 25A Rectifier
Schottky Barrier Diode (Twin Type ・ Cathode Common)
90V/ 25A Rectifier
|
SANYO[Sanyo Semicon Device]
|
| ADP1173AN-12 ADP1173AN-33 ADP1173AR-33 ADP1173 ADP |
Micropower DC-DC Converter
RECTIFIER SCHOTTKY SINGLE 1A 80V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO 1.5 A SWITCHING REGULATOR, 32 kHz SWITCHING FREQ-MAX, PDIP8
RECTIFIER SCHOTTKY DUAL 40A 60V 375A-ifsm 0.7V-vf 1mA-ir TO-3P 30/TUBE
RECTIFIER SCHOTTKY SINGLE 1A 90V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/REEL-13
|
http://
Analog Devices, Inc.
|
| NTHD4P02F NTHD4P02FT1 NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode 2.2 A, 20 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
| 25RIA160 25RIA80S90 25RIA 25RIA10 25RIA100 25RIA10 |
800V 25A Phase Control SCR in a TO-208AA (TO-48) package
1400V 40A Phase Control SCR in a TO-208AA (TO-48) package
1200V 25A Phase Control SCR in a TO-208AA (TO-48) package
1000V 25A Phase Control SCR in a TO-208AA (TO-48) package
100V 25A Phase Control SCR in a TO-208AA (TO-48) package
600V 25A Phase Control SCR in a TO-208AA (TO-48) package
400V 25A Phase Control SCR in a TO-208AA (TO-48) package
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
MEDIUM POWER THYRISTORS 中功率晶闸管
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| BAT60B Q62702-A1189 BAT60 Q62702-A118 |
From old datasheet system
Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply
|
SIEMENS[Siemens Semiconductor Group]
|
| NTLJF1103P NTLJF1103PT1G |
Power MOSFET Schottky Diode
Power MOSFET and Schottky Diode -8 V, -4.3 A, μCool? P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN
|
ON Semiconductor
|
| MIP0221SY MIP0222SY MIP0223SY MIP0224SY MIP0225SY |
Silicon MOS IC
ISOLATOR, INT'LOCK 25A 3 POLEISOLATOR, INT'LOCK 25A 3 POLE; Poles, No. of:3; Current rating:25A; Approval Bodies:UL, CSA; IP rating:IP55; Power, switching AC3 max:13kW
|
PANASONIC[Panasonic Semiconductor]
PANASONIC CORP
|
