| PART |
Description |
Maker |
| DD400S17K6CB2 |
Bare Die IGBT
|
Infineon Technologies AG
|
| S2308 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S6301 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| TC1766 |
32-Bit Single-Chip Microcontroller Bare Die Delivery
|
Infineon Technologies AG
|
| M69KB096AB80DW8 M69KB096AB M69KB096AB80CW8 |
64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRG4CC50WB |
IGBT Die in Wafer Form 600 V Size 5 WARP Speed
IRG4CC50WB IGBT Die in Wafer Form
|
Hittite Microwave Corporation
International Rectifier
|
| S4002 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S4003 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S2305-16 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| 5SMX12L2510 |
IGBT-Die
|
The ABB Group
|
| 5SMX12H1251 |
IGBT-Die
|
ABB
|
| 5SMX12H1273 |
IGBT-Die
|
The ABB Group
|
