| PART |
Description |
Maker |
| FDMC8360L |
N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 m
|
Fairchild Semiconductor
|
| FDP2D3N10C |
N-Channel Shielded Gate PowerTrench MOSFET
|
ON Semiconductor
|
| FDMC86570L |
N-Channel Shielded Gate PowerTrench MOSFET 60 V, 56 A, 4.3 m
|
Fairchild Semiconductor
|
| FDMS004N08C |
N-Channel Shielded Gate PowerTrench MOSFET
|
ON Semiconductor
|
| SRR1280-391K SRR1280-102K SRR1280-2R4Y |
SMD SHIELDED POWER CHOKE-LEAD FREE 1 ELEMENT, 390 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
SMD SHIELDED POWER CHOKE-LEAD FREE 1 ELEMENT, 1000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
CHOKE, POWER, SHIELDED, 2.5UH; Inductor type:Shielded Power Choke; Inductance:2.5uH; Tolerance, inductance: /-30%; Resistance:10mR; Current, DC max:9.2A; Frequency, resonant:45.0MHz; Case style:SMD Shielded; Q factor:20; Material, RoHS Compliant: Yes
|
Bourns, Inc.
BOURNS INC
|
| FDMS86183 |
N-Channel Shielded Gate PowerTrench MOSFET
|
ON Semiconductor
|
| SRU6025-100Y SRU6025-150Y SRU6025-151Y SRU6025-220 |
CHOKE, POWER, SHIELDED, 10UH; Inductor type:Shielded Power Choke; Inductance:10uH; Tolerance, inductance:30%; Resistance:57mR; Frequency, resonant:25MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 15UH; Inductor type:Shielded Power Choke; Inductance:15uH; Tolerance, inductance:30%; Resistance:86mR; Frequency, resonant:22MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 150UH; Inductor type:Shielded Power Choke; Inductance:150uH; Tolerance, inductance:30%; Resistance:770mR; Frequency, resonant:5MHz; Case style:SMD Shielded; Q factor:30; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 22UH; Inductor type:Shielded Power Choke; Inductance:22uH; Tolerance, inductance: /-30%; Resistance:130mR; Frequency, resonant:18MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 220UH; Inductor type:Shielded Power Choke; Inductance:220uH; Tolerance, inductance:30%; Resistance:1250mR; Frequency, resonant:4MHz; Case style:SMD Shielded; Q factor:20; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 33UH; Inductor type:Shielded Power Choke; Inductance:33uH; Tolerance, inductance:30%; Resistance:180mR; Frequency, resonant:12MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 4.7UH; Inductor type:Shielded Power Choke; Inductance:4.7uH; Tolerance, inductance: /-30%; Resistance:35mR; Frequency, resonant:42MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 68UH; Inductor type:Shielded Power Choke; Inductance:68uH; Tolerance, inductance: /-30%; Resistance:365mR; Frequency, resonant:8MHz; Case style:SMD Shielded; Q factor:10; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
|
BOURNS INC
|
| STP40NF12 |
N-CHANNEL 120V - 0.028 OHM - 40A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET
N-CHANNEL 120V - 0.028W - 40A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
N-CHANNEL 120V - 0.028W - 40A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
N-CHANNEL POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| 142-06J08SL 144-06J12L 143-16J12SL 142-06J08L 143- |
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.22 uH - 0.248 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.193 uH - 0.306 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.638 uH - 0.801 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.275 uH - 0.355 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.315 uH - 0.423 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.115 uH - 0.121 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.382 uH - 0.422 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.391 uH - 0.493 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.355 uH - 0.477 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.693 uH - 0.846 uH, VARIABLE INDUCTOR
|
Coilcraft, Inc.
COILCRAFT INC
|
| D1009UK |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
Seme LAB
|
| D1021UK |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| STF20NF20 STP20NF20 STD20NF20 |
N-channel 200V - 0.10-18A- DPAK/TO-220/TO-220FP Low gate charge STripFETPower MOSFET N沟道200 0.10 18A条，DPAK/TO-220/TO-220FP低栅极电荷STripFET⑩功率MOSFET
N-channel 200V - 0.10ヘ -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET⑩ Power MOSFET
N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET
N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET?/a> Power MOSFET
|
STMicroelectronics N.V.
|
|
