| PART |
Description |
Maker |
| FDMC86340 |
80V N-Channel Shielded Gate Power TrenchMOSFET
|
Fairchild Semiconductor
|
| FDMC86570L |
N-Channel Shielded Gate PowerTrench MOSFET 60 V, 56 A, 4.3 m
|
Fairchild Semiconductor
|
| FDMC008N08C |
N-Channel Shielded Gate PowerTrench MOSFET
|
ON Semiconductor
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| STB30NF10T4 STB30NF1006 STP30NF10FP STB30NF10 |
35 A, 100 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-channel 100V - 0.038ヘ - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET⑩ II Power MOSFET
N-channel 100V - 0.038Ω - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET
|
STMicroelectronics
|
| 142-06J08SL 144-06J12L 143-16J12SL 142-06J08L 143- |
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.22 uH - 0.248 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.193 uH - 0.306 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.638 uH - 0.801 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.275 uH - 0.355 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.315 uH - 0.423 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.115 uH - 0.121 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.382 uH - 0.422 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.391 uH - 0.493 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.355 uH - 0.477 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.693 uH - 0.846 uH, VARIABLE INDUCTOR
|
Coilcraft, Inc.
COILCRAFT INC
|
| TPD7102F |
1 channel High-Side N channel Power MOSFET Gate Driver
|
Toshiba Semiconductor
|
| AP2532GY |
Low Gate Charge, Fast Switching Performance
2.4 A, 30 V, 0.13 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Advanced Power Electronics Corp.
|
| AP9928GEM |
7.3 A, 20 V, 0.023 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Capable of 2.5V gate drive, Surface mount package
|
Advanced Power Electronics Corp.
|
| STS9NF30L STS9NF30L02 |
N-CHANNEL 30V - 0.015 OHM - 9A SO-8 LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.015 W - 9A SO-8 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
N-CHANNEL 30V - 0.015 W - 9A SO-8 LOW GATE CHARGE STripFET II POWER MOSFET
|
ST Microelectronics
Advanced Analogic Technologies
|
|
