| PART |
Description |
Maker |
| PQ26-20-K-12P-2620-2 |
PQ-26-20-K-12P-2620-2
|
FERYSTER Inductive Comp...
|
| SP-2620 SP-2625 |
(SP-2620 - SP-2625) Very Wideband / Uncompensated Operational Amplifiers
|
Sipex
|
| HMC840LP6CE |
FRACTIONAL-N PLL WITH INTEGRATED VCO 1310 - 1415, 2620 - 2830, 5240 - 5660 MHz
|
Hittite Microwave Corporation
|
| PXAC260602FCV1R0XTMA1 PXAC260602FC-16 PXAC260602FC |
Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ?2690 MHz
Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ?2690 MHz
|
Infineon Technologies A...
|
| MC33174VP MC33174VPG MC33172DR2 |
Single Supply 3.0 V to 44 V, Low Power Operational Amplifiers QUAD OP-AMP, 6500 uV OFFSET-MAX, 1.8 MHz BAND WIDTH, PDIP14
Single Supply 3.0 V to 44 V, Low Power Operational Amplifiers DUAL OP-AMP, 6500 uV OFFSET-MAX, 1.8 MHz BAND WIDTH, PDSO8
|
ON Semiconductor
|
| QID6508001 |
Dual IGBT HVIGBT Module 85 Amperes/6500 Volts
|
Powerex Power Semicondu...
|
| CM600HG-130H |
Single IGBTMOD HVIGBT Module 600 Amperes/6500 Volts
|
Powerex Power Semiconductor...
|
| PTFC262808SVV1R250 PTFC262808SVV1R250XTMA1 |
Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ?2690 MHz
|
Infineon Technologies A...
|
| MAAP-000064-PKG003 |
6500 MHz - 9500 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER 5 X 5 MM, ROHS COMPLIANT, PLASTIC, MLP, QFN-20
|
WIMA
|
| SM12CXC220 SM34CXC614 SM36CXC604 SM38CXC624 SM38CX |
860 A, 1200 V, SILICON, RECTIFIER DIODE
1160 A, 3400 V, SILICON, RECTIFIER DIODE
1010 A, 3600 V, SILICON, RECTIFIER DIODE
1106 A, 3800 V, SILICON, RECTIFIER DIODE
2640 A, 3800 V, SILICON, RECTIFIER DIODE
1106 A, 3400 V, SILICON, RECTIFIER DIODE
435 A, 1500 V, SILICON, RECTIFIER DIODE
440 A, 600 V, SILICON, RECTIFIER DIODE
1160 A, 3800 V, SILICON, RECTIFIER DIODE
1160 A, 4200 V, SILICON, RECTIFIER DIODE
940 A, 800 V, SILICON, RECTIFIER DIODE
940 A, 1800 V, SILICON, RECTIFIER DIODE
940 A, 400 V, SILICON, RECTIFIER DIODE
940 A, 1000 V, SILICON, RECTIFIER DIODE
940 A, 600 V, SILICON, RECTIFIER DIODE
940 A, 1600 V, SILICON, RECTIFIER DIODE
1106 A, 4000 V, SILICON, RECTIFIER DIODE
310 A, 2600 V, SILICON, RECTIFIER DIODE
370 A, 2600 V, SILICON, RECTIFIER DIODE
2700 A, 2600 V, SILICON, RECTIFIER DIODE
860 A, 1400 V, SILICON, RECTIFIER DIODE
440 A, 400 V, SILICON, RECTIFIER DIODE
440 A, 800 V, SILICON, RECTIFIER DIODE
435 A, 1600 V, SILICON, RECTIFIER DIODE
435 A, 1800 V, SILICON, RECTIFIER DIODE
527 A, 3200 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| MXD1013 MXD1013PA MXD1013PD MXD1013SA MXD1013SE MX |
3-in-1 silicon delay line. Output delay 45ns.
3-in-1 silicon delay line. Output delay 30ns.
3-in-1 silicon delay line. Output delay 90ns.
3-in-1 silicon delay line. Output delay 12ns.
3-in-1 silicon delay line. Output delay 25ns.
Silver Mica Capacitor; Capacitance:11pF; Capacitance Tolerance: 1pF; Series:CD4; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:2.5mm; Leaded Process Compatible:No RoHS Compliant: No
3-in-1 silicon delay line. Output delay 70ns.
3-in-1 silicon delay line. Output delay 75ns.
3-in-1 silicon delay line. Output delay 50ns.
3-in-1 silicon delay line. Output delay 20ns.
3-in-1 silicon delay line. Output delay 80ns.
3-in-1 silicon delay line. Output delay 15ns.
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
MAXIM - Dallas Semiconductor
|
| AMF-4F-122128-10-12P AMF-4F-009015-04-13P AMF-2F-0 |
12200 MHz - 12800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
950 MHz - 1450 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
5800 MHz - 6500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
7250 MHz - 7750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
|
