| PART |
Description |
Maker |
| STW48N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STF24N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| P650-U260-WH P650-U180-WH P850-U180-WH P850-U260-W |
Extremely high speed performance
|
Bourns Electronic Solutions
|
| CMPTA44 |
NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| CES2301 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2313A |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CZT2000 |
NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| AP2120N-1.8TRG1 AP2120N-2.5TRG1 AP2120N-5.0TRG1 AP |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| FDC608PZ |
High performance trench technology for extremely low RDS
|
TY Semiconductor Co., Ltd
|
| CES2308 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| AMS3400SRG |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
