| PART |
Description |
Maker |
| IXFN180N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电0mΩ的N沟道增强型HiPerFET功率MOSFET)
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFM12N100 IXFH10N100 IXFH12N100 IXFH13N100 IXFM10 |
HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
HiPerFET Power MOSFETs 12 A, 1000 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs 13 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| FMM75-01F |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM
From old datasheet system
|
IXYS[IXYS Corporation]
|
| IXFE180N20 |
HiPerFET Power MOSFETs Single Die MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS Corporation
|
| IXFX180N10 IXFK180N10 |
Discrete MOSFETs: HiPerFET Power MOSFETS
100V HiperFET Power MOSFET
Single MOSFET Die
|
IXYS[IXYS Corporation]
|
| BUZ900P BUZ901P |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
N-Channel Power MOSFET For Audio Application(N沟道功率型MOS场效应管(用于音频电路))
N?CHANNEL POWER MOSFET
|
Magnatec
Seme LAB
|
| FMD21-05QC FDM21-05QC |
Q-Class Power MOSFETs
MOSFET Modules
Q-Class Power MOSFETs 21 A, 500 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| FS10VS-5 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 10 A, 250 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFETs: FS Series, Medium Voltage, 250V
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
|
| SPB08P06P SPP08P06P SPB08P06PSMD |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
|
