| PART |
Description |
Maker |
| FDP3672 FDP3672NL |
N-Channel PowerTrench MOSFET, 105V, 41A, 0.033 Ohms @ VGS = 10V, TO-220 Package 5.9 A, 105 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel PowerTrench MOSFET 105V, 41A, 33mз 5.9 A, 105 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRF5EA1310 |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.036ohm, Id=23A)
THRU-HOLE MOUNT (LCC-28) 100V, N-CHANNEL
|
IRF[International Rectifier]
|
| FQP90N10V2 FQPF90N10V2 |
100V N-Channel Advanced QFET V2 series
100V N-Channel MOSFET 90 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRFR9120 IRFU9120 FN3987 |
5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
P Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0 |
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7A 100V的，0.300欧姆，拉德硬，SEGR性，P通道功率MOSFET
7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRHG7110 |
100V, 4 N-Channel Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率四N沟道MOSFET)
|
International Rectifier
|
| HUF75645P3 HUF75645S3S HUF75645P3NL HUF75645S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 75A条（丁）|63AB
75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
TRANSISTOR,MOSFET
75A, 100V, 0.014 Ohm, N-Channel, UltraFETPower MOSFETs
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| FQB19N10L FQI19N10L FQB19N10LTM |
100V Logic N-Channel MOSFET(漏源电压00V的逻辑N沟道增强型MOS场效应管) 19 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
100V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFI9530G IRFI9530GPBF |
-100V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=-100V, Rds(on)=0.30ohm, Id=-7.7A)
|
IRF[International Rectifier]
|
| IRFS59N10D IRFSL59N10D IRFB59N10D IRFB59N10 IRFS59 |
Power MOSFET(Vdss=100V/ Rds(on)max=0.025ohm/ Id=59A)
Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A)
HEXFET? Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
IRF[International Rectifier]
|
| IRF7452 IRF7452TR |
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=100V, Rds(on)max=0.060ohm, Id=4.5A)
|
IRF[International Rectifier]
|
|
