| PART |
Description |
Maker |
| HM2101B |
High power MOS tube, IGBT tube gate driver chip
|
Shenzhen Huazhimei Semi...
|
| EG3014 |
Power MOS tube / IGBT gate driver chip
|
EGmicro
|
| TLP250 TLP250INV |
PHOTOCOUPLER GaAlAs IRED & PHOTO-IC
TRANSISTOR INVERTER INVERTERS FOR AIR CONDITIONER IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
TOSHIBA[Toshiba Semiconductor]
|
| TLP705 |
Plasma Display Panel. Industrial Inverter IGBT/Power MOS FET Gate Drive
|
Toshiba Semiconductor
|
| TLP351 |
Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter
|
Toshiba Semiconductor
|
| APT5014B2LC APT5014LLC APT5014 |
POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| APT11GP60K APT11GP60SA |
MOSFET
POWER MOS 7 IGBT
41 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
Advanced Power Technolo...
Advanced Power Technology
MICROSEMI POWER PRODUCTS GROUP
|
| 8810 |
N-channel power MOS field effect tube
|
SHENZHEN FUMAN ELECTRON...
|
| APT5020BLC APT5020SLC |
POWER MOS VI 500V 26A 0.200 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| 3SK134B 3SK134B-T1 3SK134B-VM 3SK134B-T2 |
Dual-gate MOS FET
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
|
NEC
|
| APT40GP90B2DQ2 APT40GP90B2DQ2G |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
