PART |
Description |
Maker |
HM2101B |
High power MOS tube, IGBT tube gate driver chip
|
Shenzhen Huazhimei Semi...
|
EG3012 |
Power MOS tube / IGBT gate driver chip tube
|
EGmicro
|
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
PS9402 PS9402-E3-AX PS9402-V-AX PS9402-V-E3-AX |
2.5 A OUTPUT CURRENT, HIGH CMR, IGBT, POWER MOS FET GATE DRIVE, 16-PIN SSOP PHOTOCOUPLER
|
California Eastern Labs
|
APT5017BLC APT5017SLC APT10086BLC APT10086SLC |
POWER MOS VI 500V 30A 0.170 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
APT50M80LLC APT50M80B2LC |
POWER MOS IV 500V 58A 0.080 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
APT5014B2LC APT5014LLC APT5014 |
POWER MOS VI 500V 37A 0.140 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
|
APT45GP120JDQ2 |
75 A, 1200 V, N-CHANNEL IGBT POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP Advanced Power Technology
|
APT10025JLC |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs POWER MOS VI 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT15GP90BDQ1G APT15GP90BDQ1 |
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
APT50GP60B2DQ2 APT50GP60B2DQ2G |
POWER MOS 7 IGBT
|
Advanced Power Technology
|