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UT62W1024LC-35L - Access time: 35 ns, 128 K x 8 Bit wide range low power CMOS SRAM Access time: 55 ns, 128 K x 8 Bit wide range low power CMOS SRAM Access time: 70 ns, 128 K x 8 Bit wide range low power CMOS SRAM

UT62W1024LC-35L_7937280.PDF Datasheet
 
Part No. UT62W1024LC-35L UT62W1024LC-35LL UT62W1024LC-55L UT62W1024LC-55LL UT62W1024LC-70L UT62W1024LC-70LL UT62W1024LS-35L UT62W1024LS-35LL UT62W1024LS-55L UT62W1024LS-55LL UT62W1024LS-70L UT62W1024LS-70LL UT62W1024PC-35L UT62W1024PC-35LL UT62W1024PC-55L UT62W1024PC-55LL UT62W1024PC-70L UT62W1024PC-70LL UT62W1024SC-35L UT62W1024SC-35LL UT62W1024SC-55L UT62W1024SC-55LL UT62W1024SC-70L UT62W1024SC-70LL
Description Access time: 35 ns, 128 K x 8 Bit wide range low power CMOS SRAM
Access time: 55 ns, 128 K x 8 Bit wide range low power CMOS SRAM
Access time: 70 ns, 128 K x 8 Bit wide range low power CMOS SRAM
File Size 227.80K  /  14 Page  

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UTRON Technology

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 Full text search : Access time: 35 ns, 128 K x 8 Bit wide range low power CMOS SRAM Access time: 55 ns, 128 K x 8 Bit wide range low power CMOS SRAM Access time: 70 ns, 128 K x 8 Bit wide range low power CMOS SRAM
 Product Description search : Access time: 35 ns, 128 K x 8 Bit wide range low power CMOS SRAM Access time: 55 ns, 128 K x 8 Bit wide range low power CMOS SRAM Access time: 70 ns, 128 K x 8 Bit wide range low power CMOS SRAM

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PART Description Maker
UT62W1024LC-35L UT62W1024LC-35LL UT62W1024LC-55L U Access time: 35 ns, 128 K x 8 Bit wide range low power CMOS SRAM
Access time: 55 ns, 128 K x 8 Bit wide range low power CMOS SRAM
Access time: 70 ns, 128 K x 8 Bit wide range low power CMOS SRAM
 UTRON Technology
WE128K32N-120G2TC WE128K32N-120G2TCA WE128K32N-120 Access time:120 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:150 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:200 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:140 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:300 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:250 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:240 ns; 128K x 32 EEPROM module, SMD 5962-94585
 White Electronic Designs
A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
 AMIC Technology
A67L7332SERIES A67L7336SERIES A67L8316SERIES A67L8 Cycle time:7ns; access time:4.5ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4.2ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4ns; 128K x 32 LVTTL, pipelined DBA SRAM
256K X 16/18. 128K X 32/36 LVTTL. Pipelined DBA SRAM 256 × 16/18128K的X 32/36 LVTTL等级。流水线数据库管理员的SRAM
256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
Cycle time:7ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:7.5ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:8.5ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
 AMIC Technology, Corp.
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 Maxim Integrated Produc...
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K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
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256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
 Samsung Electronic
SAMSUNG[Samsung semiconductor]
ULQ2801A ULQ2802A ULQ2803A ULQ2804A ULQ2805A Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:256MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 八达林顿阵列
EIGHT DARLINGTON ARRAYS
 STMicroelectronics N.V.
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STMICROELECTRONICS[STMicroelectronics]
K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
 SAMSUNG[Samsung semiconductor]
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M41T00SM6F M41T00S M41T00SM6E Serial Access Real-Time Clock
 ST Microelectronics
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 Electronic Theatre Controls, Inc.
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Access time: 12 ns, 8 K x 8 Bit high speed CMOS SRAM
Access time: 15 ns, 8 K x 8 Bit high speed CMOS SRAM
 UTRON Technology
 
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