| PART |
Description |
Maker |
| 2SC4672 |
NPN Silicon Epitaxial Silicon Tra nsistor
|
SeCoS Halbleitertechnologie GmbH
|
| MJ10021 ON1972 MJ10020 |
From old datasheet system
60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| MJF47 |
Bipolar Power TO220FP NPN 1A 250V; Package: TO-220 3 LEAD FULLPAK; No of Pins: 3; Container: Rail; Qty per Container: 50 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
ON Semiconductor
|
| BUP53 BUP52 BUP53.MODR1 |
60 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AE HERMETIC SEALED, METAL, TO-3, 2 PIN
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| BFG591 BFG591/T1 |
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
NPN 7 GHz wideband transistor
|
Philips
|
| BUV20 BUV20_D ON0256 |
From old datasheet system
50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| 2N6339 2N6341 2N6340 ON0084 |
100, 120, 140, 150 VOLTS 250 WATTS
POWER TRANSISTORS NPN SILICON
From old datasheet system
|
ON Semiconductor
|
| MJ15023 MJ15025 ON1984 |
16 AMPERE SILICON POWER TRANSISTORS 200 AND 250 VOLTS 250 WATTS
From old datasheet system
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| 2SD2017 |
Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍扩散平面达林顿晶体 6 A, 250 V, NPN, Si, POWER TRANSISTOR
Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose)
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 250 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
