| PART |
Description |
Maker |
| KSH117TF KSH117ITU |
PNP Silicon Darlington Transistor; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252
2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-251 IPAK-3
|
Fairchild Semiconductor, Corp.
|
| BDW74C-S |
PNP DARLINGTON 100V 8A 8 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Bourns, Inc.
|
| 2PB709ARL_DG 2PB709ARL 2PB709ASL 2PB709ASL/DG 2PB7 |
45 V, 100 mA PNP general-purpose transistors 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB PLASTIC PACKAGE-3
|
NXP Semiconductors N.V.
|
| PMP5201G PMP5201V PMP5201Y PMP5201Y115 PMP5201Y135 |
PNP/PNP matched double transistors; Package: SOT363 (SC-88); Container: Tape reel smd 100 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| TIP112T MJE15028A BUT56AW BUT56AA BUT56AN MOTOROLA |
2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
8 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB
8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
7 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2.5 A, 750 V, NPN, Si, POWER TRANSISTOR, TO-220AB
3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| PEMB24 PUMB24 |
PEMB24; PUMB24; PNP/PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm
|
Philips
|
| CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
| PHPT61010PY |
100 V, 10 A PNP high power bipolar transistor
|
NXP Semiconductors
|
| SFT5553A_G SFT5553A-G |
5 AMP 100 Volts PNP Power Transistor
|
SSDI[Solid States Devices, Inc]
|
| 2SC4342M 2SC4342-K-AZ |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|进步党| 100V的五（巴西）总裁| 3A条一（c）|26
3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126
|
NEC, Corp.
|
| PMBTA92 PMBTA92215 PMBTA92-T |
100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP high-voltage transistor - Complement: PMBTA42 ; fT min: 50 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP Semiconductors
|
| 2SA1468 2SA1468C |
100 mA, 180 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Silicon PNP Epitaxial
|
Renesas Electronics Corporation
|
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