| PART |
Description |
Maker |
| GI821 GI828 GI820 GI826 GI822 GI824 |
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 820uF; Voltage: 63V; Case Size: 16x35.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 680uF; Voltage: 63V; Case Size: 16x31.5 mm; Packaging: Bulk
Fast Switching Plastic Rectifier(快速转换塑胶整流器)
|
GE Security, Inc.
GE[General Semiconductor]
|
| PESD5V0X1BCL |
Extremely low capacitance bidirectional ESD protection diode
|
NXP Semiconductors
|
| STF43N60DM2 |
Extremely low gate charge and input capacitance
|
STMicroelectronics
|
| PMF370XN |
N-channel mTrenchMOS extremely low level FET
N-channel uTrenchmos (tm) extremely low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| SBH52444G-FSAN SBH52444X SBH52444Z-FSAN SBH52444N- |
High Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
Components and FTTx solutions - Tx 1310nm/Rx 1550nm, 155 MBit/s TIA
High Power BIDI Optical Standard Module 1310 nm Emitting 1550 nm Receiving
From old datasheet system
High Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving
Snap-in Panel Mount Switch, Double Pole Double Throw (DPDT) Circuitry, 10 A at 277 Vac, Bullet Nose Plunger Actuator, Silver Contacts, Quick Connect Termination
|
http://
INFINEON[Infineon Technologies AG]
|
| PMF290XN |
N-channel uTrenchmos (tm) extremely low level FET
N-channel mTrenchMOS extremely low level FET
N-channel mTrenchMOS extremely low level FET
|
http://
PHILIPS[Philips Semiconductors]
|
| BB664 Q62702-B0909 Q62702-B0908 |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance) 硅变容二极管（甚高频电视信号接收器高电容率低串联电感低串联电阻）
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SBM52214X SBM52414Z SBM52214G SBM51214G SBM51214N |
Components and FTTx solutions - Tx 1310nm/Rx 1310nm, Medium Power
Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1310 nm Receiving
Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
Transceiver
Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1310 nm Receiving
中功率比迪光学标准模1310纳米发光，纳米接1310
|
INFINEON[Infineon Technologies AG]
|
| STP12N50M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STF7N65M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STP12N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
