| PART |
Description |
Maker |
| B82500-C-A10 B82500-C-A2 B82500-C-A8 B82500-C-A5 |
VHF chokes with ferrite core Rated voltage 250 V dc/ac Rated current 0,2 to 2 A Rated inductance 120 to 3900 mH
|
EPCOS AG
|
| C62122-A132-B94 B84114-D-A10 B84114-D-A110 B84114- |
SIFI-D for high insertion loss Rated voltage 250 V~, 50/60 Hz Rated current 1 A to 10 A
|
EPCOS[EPCOS]
|
| B82476-A1684-M B82476-A1103-M B82476-A1104-M B8247 |
INDUCTOR 100UH 1200MA
Rated inductance 10 to 1000 mH Rated current 300 to 3800 mA
|
EPCOS[EPCOS]
|
| B82134 B82111-E B82114 B82114-R-A1 B82114-R-A4 B82 |
VHF chokes for power line applications Rated voltage 500 V dc/ac Rated current max. 1 A
|
EPCOS AG
EPCOS[EPCOS]
|
| B84115-E-A60 B84115-E-K60 B84115-E-A110 B84115-E-A |
SIFI-E for high insertion loss Rated voltage 250 V~, 50/60 Hz Rated current 3 A to 10 A 推出SIFI -高插入额定电50失去位置0/60赫兹额定电流3 A0
|
EPCOS AG
|
| IRFV460 IRFV460-15 |
Simple Drive Requirements
REPETITIVE AVALANCHE RATED AND dv/dt RATED
500V Single N-Channel Hi-Rel MOSFET in a TO-258AA package
|
International Rectifier
|
| BUZ111 BUZ111S Q67040-S4003-A2 |
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SPP08P06P09 SPP08P06PG |
8.8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
P-Channel Enhancement mode Avalanche rated dv/dt rated
|
Infineon Technologies AG
|
| IXTY64N055T IXTP64N055T |
N-Channel Enhancement Mode Avalanche Rated
TrenchMV Power MOSFET N-Channel EngancementMode Avalanche Rated
|
IXYS Corporation
|
| BUZ104S Q67040-S4007-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
