| PART |
Description |
Maker |
| JDH2S01T |
UHF Band Mixer
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer
|
Toshiba Corporation
|
| MT6L58AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6C03AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| 3SK135A 3SK135A-T1 3SK135A-KS 3SK135A-T2 |
For UHF TV tuner high frequency amplification
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
NEC
|
| 933912210215 |
SILICON, UHF BAND, MIXER DIODE
|
NXP SEMICONDUCTORS
|
| MA27V18 |
UHF BAND, 2.89 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
|
PANASONIC CORP
|
| BAT68-04E6433 |
SILICON, VHF-UHF BAND, MIXER DIODE
|
INFINEON TECHNOLOGIES AG
|
| MA342-B |
UHF BAND, 13.25 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-30
|
PANASONIC CORP
|
| KDV240E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO) 变容二极管外延硅平面二极管（VCO的超高频无线电）
VCO for UHF Band Radio
|
KEC(Korea Electronics)
Korea Electronics (KEC)
|
| BB515E6433 |
VHF-UHF BAND, 18.7 pF, SILICON, VARIABLE CAPACITANCE DIODE
|
SIEMENS A G
|
| MA4ST083CK-287T MA4ST080CK-287T |
LF-UHF BAND, 5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
LF-UHF BAND, 24.8 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
|
