| PART |
Description |
Maker |
| RM12F0.0115OHMCT RM12F0.0124OHMCT RM12F0.011OHMCT |
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0115 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0124 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.011 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0113 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0107 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0105 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0118 ohm, SURFACE MOUNT, 1206 CHIP
|
Cal-Chip Electronics
|
| AM29F800BT-90WBC AM29F800BT-55WBI AM29F800BB-55WBE |
and flexible way to implement power solutions for the latest high performance CPUs and ASICs.; Same as IR3087 with bag packaging
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3709Z with Lead Free Packaging
40V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7470 with Lead Free Packaging
Complete VR11.0 or AMD PVID power solution.; A IR3505M packaged on tape and reel 3000 per reel
8 PWM 400 KHz Sync Contr in a 8-Pin SOIC(NB) package; A IRU3037ACS with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRLZ44NS with Lead Free Packaging
The XPHASE Control IC combined with an IR XPhase TM Phase IC provides a full featured and flexible way to implement a complete an Opteron or Athlon 64 power solution.; A IR3082M with Tape and Reel Packaging
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package; Similar to IRLL024Z with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package; A IRLL2705 with Standard Packaging
75V Single N-Channel HEXFET Power MOSFET in a TO-262 Package; Similar to IRF2807ZL with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF3805S with Lead Free Packaging
x8/x16 Flash EEPROM x8/x16闪存EEPROM
XPHASE VRD10 Control IC with VccVid and Overtemp Detect; Similar to IR3080M with Lead Free Packaging on Tape and Reel x8/x16闪存EEPROM
XPHASE IC with Fault and Overtemp Detect; Same as the IR3088AM with Tape and Reel Packaging. x8/x16闪存EEPROM
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO44
|
Linear Technology, Corp.
ATM Electronic, Corp.
Integrated Device Technology, Inc.
Advanced Micro Devices, Inc.
|
| RFL4N12 RFL4N15 |
4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs 4000 mA, 120 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF
4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs
|
Intersil, Corp.
Intersil Corporation
|
| FMMT458 |
400 Volt VCEO
|
TY Semiconductor Co., Ltd
|
| S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| AM29F400BT-50FC AM29F400BT-50FI AM29F400BB-50EE AM |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF2805 with Lead Free Packaging
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL3215 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL520N with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRL3705ZS with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7492 with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFZ46ZS with Standard Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB4215 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package; A IRFPS3810 with Standard Packaging
80V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU2908 with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1310NL with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SOT-223 package; A IRLL2703 with Standard Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ34VL with Standard Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRFIZ24E with Standard Packaging
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package. Recommended replacement is IRF6621; A IRF6604 with Standard Tape and Reel Quantity
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRLZ34NS with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7452 with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL3803V with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ48NS with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF3710ZL with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; Similar to IRLI2203N with Lead Free Packaging
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRL3714ZL with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ48ZL with Standard Packaging
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRL3714S with Lead Free Packaging
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRL3714S with Standard Packaging
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 55 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 55 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| APT40M70JVFR |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400;
POWER MOS V FREDFET
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| FRM244D FN3230 FRM244R FRM244H |
12A/ 250V/ 0.400 Ohm/ Rad Hard/ N-Channel Power MOSFETs
12A, 250V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FRK460D FRK460H FRK460R FN3238 |
17A/ 500V/ 0.400 Ohm/ Rad Hard/ N-Channel Power MOSFETs
17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IRFU322 |
2.3 A, 400 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
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