| PART |
Description |
Maker |
| IS4346R32160D IS4346R16320D IS4346R86400D IS43R321 |
16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM
16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM
|
List of Unclassifed Manufac...
Integrated Silicon Solution
|
| HYB25D512160AT-6 HYB25D512800AT-6 HYB25D512160AT-7 |
DDR SDRAM Components - 512Mb (32Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (64Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (32Mx16) DDR266A (2-3-3)
DDR SDRAM Components - 512Mb (128Mx4) DDR266A (2-3-3)
DDR SDRAM Components - 512Mb (64Mx8) DDR266A (2-3-3)
|
Infineon
|
| HY5DS113222FM-28 HY5DS113222FM-33 HY5DS113222FM-36 |
GDDR SDRAM - 512Mb
512M(16Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| K4X51163PE-FG |
32Mx16 Mobile DDR SDRAM
|
Samsung semiconductor
|
| K4X51163PE-L |
32Mx16 Mobile DDR SDRAM
|
Samsung semiconductor
|
| HMD16M32M8EH HMD16M32M8EH-5 HMD16M32M8EH-6 |
64Mbyte (16Mx32) 72-pin EDO Mode 4K Ref. SIMM Design 5V
|
Hanbit Electronics Co.,Ltd
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
| M464S6453BK0 |
64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Datasheet
|
Samsung Electronic
|
| HDD128M72D18RPW-16B HDD128M72D18RPW HDD128M72D18RP |
DDR SDRAM Module 1024Mbyte (128Mx72bit), based on 64Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register
|
Hanbit Electronics Co.,Ltd
|
| W3EG6464S-BD4 |
512MB - 64Mx64 DDR SDRAM UNBUFFERED w/PLL 512MB 64Mx64 DDR SDRAM的缓冲瓦锁相
|
STMicroelectronics N.V.
|
| TS512MJF110 |
512MB USB2.0 JetFlash垄芒110
512MB USB2.0 JetFlash?10
|
Transcend Information. Inc.
|
