| PART |
Description |
Maker |
| TD62551 TD62551S TD62553S E005673 TD62555S TD62554 |
4CH SINGLE DRIVER : COMMEN EMITTER
From old datasheet system
4CH SINGLE DRIVER : COMMON EMITTER
4CH SINGLE DIRVER : COMMON EMITTER 4路单DIRVER：共发射
|
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
| SLT4466-XP/RH2-H885A SLT4460-CP/RH2-H260A SLT4466- |
FIBER OPTIC LASER DIODE MODULE EMITTER, 1368-1372nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT ROHS COMPLIANT PACKAGE
FIBER OPTIC LASER DIODE MODULE EMITTER, 1408-1412nm, 2500Mbps, THROUGH HOLE MOUNT, SC/PC CONNECTOR ROHS COMPLIANT PACKAGE
FIBER OPTIC LASER DIODE MODULE EMITTER, 1367-1373nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT
FIBER OPTIC LASER DIODE MODULE EMITTER, 1348-1352nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT
FIBER OPTIC LASER DIODE MODULE EMITTER, 1528-1532nm, 2500Mbps, THROUGH HOLE MOUNT, SC/PC CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1528-1532nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT
|
Japan Aviation Electronics Industry, Ltd.
Cooper Bussmann, Inc.
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| TCZT8020 |
Matchable Pairs - Emitter and Detector
From old datasheet system
Matchable Pairs ? Emitter and Detector
|
Vishay Telefunken
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| STC06IE170HV |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a>
Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
|
http://
ST Microelectronics, Inc.
STMicroelectronics
|
| TLRA270 |
TOSHIBA LED Lamp GaAAs Red−light Emitter
TOSHIBA LED Lamp GaAГAs Red-light Emitter
|
TOSHIBA[Toshiba Semiconductor]
|
| STC04IE170HV |
Emitter switched bipolar transistor ESBT? 1700V - 4A - 0.17 W
Emitter switched bipolar transistor ESBT㈢ 1700V - 4A - 0.17 W
|
STMicroelectronics
|
| MAX692 MAX692CPA MAX692EJA MAX692EPA MAX692MJA MAX |
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-CFP -55 to 125 微处理器监控电路
IGBT Module; Transistor Polarity:N Channel; Collector Emitter Voltage, Vceo:1.2kV; Collector Emitter Saturation Voltage, Vce(sat):3.2V; Power Dissipation, Pd:1140W; Package/Case:Module; C-E Breakdown Voltage:1200V
From old datasheet system
POWER SUPPLY SUPERVISOR,CMOS,DIP,16PIN,PLASTIC
Microprocessor Supervisory Circuits
|
Maxim Integrated Produc...
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products Inc
MAXIM - Dallas Semiconductor
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
