PART |
Description |
Maker |
IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门)) From old datasheet system TMOS POWER FET 27 AMPERES TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. ON Semiconductor
|
IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State GE Solid State
|
MTM20P10 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P...
|
MRF1517T1 |
RF Power Field Effect Transistor
|
Freescale Semiconductor... FREESCALE[Freescale Semiconductor, Inc]
|
MTP12N10L |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
MRF8S26120HR3 MRF8S26120HSR3 |
RF Power Field Effect Transistor
|
Motorola
|
MTH6N60 MTH6N55 |
Power Field Effect Transistor
|
New Jersey Semi-Conduct...
|
27271SL |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MTP6N10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
MTP2N80 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|