| PART |
Description |
Maker |
| HYS64V8220GU HYS72V8220GU HYS72V4200GU HYSV4200GU |
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 3.3 4米64/72-Bit一银行内存模块3.3 8米64/72-Bit 2银行内存模块
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 8M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 1728307 |
PC terminal block, Nominal current: 10 A, Nom. voltage: 160 V, Pitch: 3.81 mm, Number of positions: 4, Type of connection: Screw connection, Assembly: Soldering, Conductor/PCB connection
|
PHOENIX CONTACT
|
| 0441012 |
Ground modular terminal block, Connection method: Screw connection, Cross section
|
PHOENIX CONTACT
|
| 0442079 |
Ground modular terminal block, Connection method: Screw connection, Cross section
|
PHOENIX CONTACT
|
| 0441041 |
Ground modular terminal block, Connection method: Screw connection, Cross section
|
PHOENIX CONTACT
|
| 0441083 |
Ground modular terminal block, Connection method: Screw connection, Cross section
|
PHOENIX CONTACT
|
| 0443023 |
Ground modular terminal block, Connection method: Screw connection, Cross section
|
PHOENIX CONTACT
|
| 0708797 |
Molded feed-through terminal block, with internal and external screw connection, vertical conductor connection, for 2.5 - 6 mm thick housing panels - HDFKV 50-VP GNYE
|
Phoenix Contact
|
| HB52RF649E1U-75B |
512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC133 SDRAM
|
Elpida Memory
|
| HB52E649E12-A6B HB52E649E12-B6B |
512 MB Registered SDRAM DIMM 64-Mword 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 4 Components) PC100 SDRAM
|
Elpida Memory
|
