| PART |
Description |
Maker |
| SST89C54-33-AC-NJ SST89C58-33-AC-NJ SST89C54-33-AI |
Voltage Regulator IC; Output Current:150mA; Output Voltage:3.3V; Package/Case:5-SOT-23; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process Compatible:No; Output Current Max:150mA; Output Voltage Max:3.3V
Linear Voltage Regulator IC; Output Current Max:150mA; Supply Voltage Max:6V; Package/Case:5-SOT-23; Current Rating:150mA; Leaded Process Compatible:No; Output Voltage Max:5V; Peak Reflow Compatible (260 C):No
Replaced by PT78ST133 : 3.3Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85
Voltage Regulator IC; Output Current:150mA; Output Voltage:2.6V; Package/Case:5-SOT-23; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process Compatible:No; Output Current Max:150mA; Output Voltage Max:2.6V
Linear Voltage Regulator IC; Package/Case:5-SOT-23; Current Rating:150mA; Leaded Process Compatible:No; Output Voltage Max:5V; Peak Reflow Compatible (260 C):No; Reel Quantity:3000; Voltage Regulator Type:Low Dropout (LDO) RoHS Compliant: No
Linear Voltage Regulator IC; Output Current Max:150mA; Supply Voltage Max:6V; Package/Case:5-SOT-23; Current Rating:150mA; Leaded Process Compatible:No; Output Voltage Max:2.85V; Peak Reflow Compatible (260 C):No
Linear Voltage Regulator IC; Output Current Max:150mA; Supply Voltage Max:6V; Package/Case:5-SOT-23; Current Rating:150mA; Leaded Process Compatible:No; Output Voltage Max:3V; Peak Reflow Compatible (260 C):No
Linear Voltage Regulator IC; Output Current Max:150mA; Supply Voltage Max:6V; Package/Case:5-SOT-23; Current Rating:150mA; Leaded Process Compatible:No; Output Voltage Max:1.8V; Peak Reflow Compatible (260 C):No
Voltage Regulator IC; Output Current:500mA; Output Voltage:1.215V; Package/Case:8-MLP33; Supply Voltage Max:6V; Current Rating:500mA; Leaded Process Compatible:No; Output Current Max:500mA; Output Voltage Max:1.215V
FlashFlex51 MCU FlashFlex51单片
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|
| FAN2502S26 FAN2503S25 |
THREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS 三端固定电压调节
Pch Power MOSFET; Surface Mount Type: N; Package: VS-8; R DS On (Ω): (max 0.09) (max 0.041) (max 0.03); I_S (A): (max -6) 积极的固定电压稳压器
|
Fairchild Semiconductor, Corp.
3M Company
|
| SSTJ210 SSTJ211 SSTJ212 J210 J211 J212 |
N-Channel JFET UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92
Voltage Regulator IC; Package/Case:5-SOT-23; Output Current:150mA; Output Voltage:2.6V; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process Compatible:No; Output Current Max:150mA; Output Voltage Max:2.6V RoHS Compliant: No
|
Calogic LLC
Calogic LLC
CALOGIC[Calogic, LLC]
|
| 1120-222K-RC 1120-1R2M-RC 1120-680K-RC 1120-681K-R |
RF Choke; Series:1120; Inductance:2.2mH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:800mA; DC Resistance Max:1.54ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1120; Inductance:1.2uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:11.4A; DC Resistance Max:0.003ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1120; Inductance:68uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:4.8A; DC Resistance Max:0.053ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1120; Inductance:680uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:1.6A; DC Resistance Max:0.430ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1120; Inductance:1.8uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:11.4A; DC Resistance Max:0.003ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1120; Inductance:330uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:1.6A; DC Resistance Max:0.305ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1120; Inductance:470uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:1.6A; DC Resistance Max:0.355ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1120; Inductance:1.5mH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:800mA; DC Resistance Max:1.26ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
Very high current capacity
|
BOURNS INC
Bourns Electronic Solut...
|
| TSMBG1005C TSMBG1006C TSMBG1007C TSMBG1009C TSMBG1 |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|100V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|110V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|145V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|185V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|200V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|210V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|215V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|250V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|265V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|300V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|350V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|440V V(BO) MAX|DO-215AA 单双向击穿二极管| 440V五（公报）最大|的DO - 215AA
|
ITT, Corp.
|
| 2PC4081S135 |
NPN general-purpose transistor - Complement: 2PA1576S ; fT min: 100 MHz; hFE max: 560 ; hFE min: 270 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 40 V; Package: SOT323 (SC-70); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| BC328-16/E6 BC328/E6 BC328-40/E6 BC327/E6 BC327-40 |
IC MAX 7000 CPLD 64 100-TQFP
MAX II CPLD 570 LE 256-FBGA
MAX II CPLD 570 LE 100-TQFP
MAX 7000 CPLD 192 MC 160-PQFP
MAX 7000 CPLD 32 MC 44-TQFP
MAX 3000A CPLD 32 MC 44-TQFP
MAX 7000 CPLD 256 MC 100-FBGA 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 800mA的一（c）|26AA
800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
|
Mitsubishi Electric, Corp.
VISHAY SEMICONDUCTORS
|
| PMBT5550 PMBT5550_3 PMBT5550215 |
NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| X4ODC24A X4ODC15A |
Input/Output Module; Input Current Max:15mA; Output Current:1A; Output Current Max:1A; Output Type:DC; Output Voltage:100V; Supply Voltage Max:30.5V; Supply Voltage Min:18V; Output Voltage Max:200V; Output Voltage Min:5V
Input/Output Module; Input Current Max:20mA; Output Current:1A; Output Current Max:1A; Output Type:DC; Output Voltage:100V; Supply Voltage Max:20V; Supply Voltage Min:10V; Output Voltage Max:200V; Output Voltage Min:5V
|
CRYDOM CORP
|
| MPAT-02000220-3706 MPAT-10701250-6020 MPAT-0750085 |
2000 MHz - 2200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.7 dB INSERTION LOSS-MAX
10700 MHz - 12500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7500 MHz - 8500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.8 dB INSERTION LOSS-MAX
7900 MHz - 8400 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7250 MHz - 7750 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
2100 MHz - 2700 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.5 dB INSERTION LOSS-MAX
17700 MHz - 20200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX
17300 MHz - 18100 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX
12750 MHz - 13250 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
5845 MHz - 6430 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
|
| TC74VHC4053AFK TC74VHC4051AFT |
Loop detection; Vin (V) max.: 24; Icc (mA) max.: 6.45; Fmax (kHz) max.: 400; Topr [Tjopr] (°C): -40 to 125; Remarks: Power factor collection; Package: DIP; Pin count: 16
Synchronous phase shift full-bridge control IC ; Vin (V) max.: 20; Icc (mA) max.: 10; Fmax (kHz) max.: 2 MHz; Topr [Tjopr] (°C): -40 to 125; Remarks: Switching regulator; Package: TSSOP; Pin count: 20
|
Toshiba Corporation
|
