PART |
Description |
Maker |
DS-USB-COM422-PLUS1 |
Future Technology Devices International Ltd
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List of Unclassifed Manufac...
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FT312D-32L1C FT312D-32Q1C |
Future Technology Devices International Ltd.
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List of Unclassifed Manufacturers
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USB-COM422 |
Future Technology Devices International Ltd
|
List of Unclassifed Manufac...
|
FT51A-EVM |
Future Technology Devices International Datasheet
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List of Unclassifed Man...
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EP1AGX20CF780C6N EP1AGX35CF780C6N EP1AGX50CF780C6N |
The ArriaTM GX family of devices combines 3.125 gigabits per second (Gbps) serial transceivers with reliable packaging technology
|
Altera Corporation
|
2FB96F 2FB96M 2FB30F |
FUTURE BUS 2.00mm CENTERLINE EIA STANDARD
|
Adam Technologies, Inc.
|
RKEF090 RKEF300 RKEF250 BBRF550 BBRF5501 RKEF500 R |
PolySwitch Resettable Devices Radial-leaded Devices Overcurrent Protection Device
|
Tyco Electronics http://
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W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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CREE POWER
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TRF600-150-2 TRF600-160 TRF600-160-2 TRF600-160-R1 |
PolySwitch Resettable Devices Telecommunications & Networking Devices
|
Tyco Electronics
|
PICOSMD035F MINISMDC100F MINISMDC200S MINISMDC150F |
PolySwitch Resettable Devices Surface-mount Devices
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Tyco Electronics
|
P1804U P3100SCMC P3100SD A2106Z P2103A P2103ACMC P |
SIDACtor devices solid state crowbar devices
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TECCOR [Teccor Electronics] TECCOR[Teccor Electronics]
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